| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N6421 |
Complementary Medium-Power High Voltage Power Transistor 35W 2A |
Motorola |
| 182 |
2N6422 |
Complementary Medium-Power High Voltage Power Transistor 35W 2A |
Motorola |
| 183 |
2N6423 |
Complementary Medium-Power High Voltage Power Transistor 35W 2A |
Motorola |
| 184 |
2N6493 |
Trans GP BJT NPN 350V 5A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 185 |
2N6494 |
Trans GP BJT NPN 350V 5A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 186 |
2N6499 |
Trans GP BJT NPN 350V 5A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 187 |
2N650 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 188 |
2N6513 |
Trans GP BJT NPN 350V 7A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 189 |
2N6515 |
0.625W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 35 - hFE |
Continental Device India Limited |
| 190 |
2N6517 |
0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
| 191 |
2N6517 |
High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 192 |
2N6517 |
High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 193 |
2N6520 |
0.625W General Purpose PNP Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
| 194 |
2N653 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 195 |
2N654 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 196 |
2N655 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 197 |
2N6559 |
Trans GP BJT NPN 350V 0.5A 3-Pin(3+Tab) TO-202 |
New Jersey Semiconductor |
| 198 |
2N6579 |
Trans GP BJT NPN 350V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 199 |
2N658 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 200 |
2N659 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 201 |
2N6654 |
Trans GP BJT NPN 350V 20A |
New Jersey Semiconductor |
| 202 |
2N6659 |
Trans MOSFET N-CH 35V 1.4A 3-Pin TO-205AD |
New Jersey Semiconductor |
| 203 |
2N6677 |
NPN silicon power transistor. 15 A, 350 V, 175 W. |
Motorola |
| 204 |
2N6677 |
Trans GP BJT NPN 350V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 205 |
2N6739 |
Trans GP BJT NPN 350V 10A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 206 |
2N6759 |
N-Channel Power MOSFETs/ 5.5A/ 350V/400V |
Fairchild Semiconductor |
| 207 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 208 |
2N6760 |
N-Channel Power MOSFETs/ 5.5A/ 350V/400V |
Fairchild Semiconductor |
| 209 |
2N6767 |
N-Channel Power MOSFETs/ 15A/ 350V/400V |
Fairchild Semiconductor |
| 210 |
2N6768 |
N-Channel Power MOSFETs/ 15A/ 350V/400V |
Fairchild Semiconductor |
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