| No. |
Part Name |
Description |
Manufacturer |
| 241 |
300YD11 |
General-Purpose Silicon Rectifiers 350A |
TOSHIBA |
| 242 |
300YD11 |
Silicon alloy diffused junction rectifier 350A 2000V |
TOSHIBA |
| 243 |
30FQ030 |
Diode Schottky 35V 30A 2-Pin DO-4 |
New Jersey Semiconductor |
| 244 |
30FQ035 |
V(rrm): 35V; 30A schottky power rectifier |
International Rectifier |
| 245 |
30KP350A |
Diode TVS Single Uni-Dir 350V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 246 |
30KP350CA |
Diode TVS Single Bi-Dir 350V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 247 |
30KPA350 |
Diode TVS Single Uni-Dir 350V 30KW 2-Pin Case P-600 |
New Jersey Semiconductor |
| 248 |
30KPA350A |
Diode TVS Single Uni-Dir 350V 30KW 2-Pin Case P-600 |
New Jersey Semiconductor |
| 249 |
30KPA350C |
Diode TVS Single Uni-Dir 350V 30KW 2-Pin Case P-600 |
New Jersey Semiconductor |
| 250 |
30KPA350CA |
Diode TVS Single Bi-Dir 350V 30KW 2-Pin Case P-600 |
New Jersey Semiconductor |
| 251 |
35MB05A |
Diode Rectifier Bridge Single 50V 35A 4-Pin D-34A |
New Jersey Semiconductor |
| 252 |
35MB100A |
V(rrm): 1000V; 35A rectifier bridge |
International Rectifier |
| 253 |
35MB100A |
Diode Rectifier Bridge Single 1KV 35A |
New Jersey Semiconductor |
| 254 |
35MB120A |
V(rrm): 1200V; 35A rectifier bridge |
International Rectifier |
| 255 |
35MB120A |
Diode Rectifier Bridge Single 1.2KV 35A 4-Pin |
New Jersey Semiconductor |
| 256 |
35PD10M |
The 35PD5M-TO, an InGaAs photodiode with a 5mm-diameter photosensitive packaged in a TO-5 header, is designed for applications in ... |
Anadigics Inc |
| 257 |
35PD1M-TO |
The 35PD1M-TO, an InGaAs photodiode with a 1mm-diameter photosensitive packaged in a TO-46 header, is designed for applications in ... |
Anadigics Inc |
| 258 |
36MB100A |
Diode Rectifier Bridge Single 1KV 35A 4-Pin D-34 |
New Jersey Semiconductor |
| 259 |
36MB100B |
Diode Rectifier Bridge Single 1KV 35A 4-Pin D-34 |
New Jersey Semiconductor |
| 260 |
36MB10A |
Diode Rectifier Bridge Single 100V 35A 4-Pin D-34 |
New Jersey Semiconductor |
| 261 |
36MB10B |
Diode Rectifier Bridge Single 1KV 35A 4-Pin D-34 |
New Jersey Semiconductor |
| 262 |
36MB120A |
Diode Rectifier Bridge Single 1.2KV 35A 4-Pin D-34 |
New Jersey Semiconductor |
| 263 |
3N211 |
Trans MOSFET N-CH 35V |
New Jersey Semiconductor |
| 264 |
3N212 |
Trans MOSFET N-CH 35V |
New Jersey Semiconductor |
| 265 |
3N213 |
Trans MOSFET N-CH 35V |
New Jersey Semiconductor |
| 266 |
40CDQ035 |
V(rwm): 35V; 40A dual schottky center tap rectifier |
International Rectifier |
| 267 |
40TPS08 |
800V 35A Phase Control SCR in a TO-247AC package |
International Rectifier |
| 268 |
40TPS08A |
800V 35A Phase Control SCR in a TO-247AC package |
International Rectifier |
| 269 |
40TPS12 |
1200V 35A Phase Control SCR in a TO-247AC package |
International Rectifier |
| 270 |
40TPS12A |
1200V 35A Phase Control SCR in a TO-247AC package |
International Rectifier |
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