| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2X |
Marking for NE68135 part number, 35 NEC (MICRO-X) package, X=LOT CODE |
NEC |
| 242 |
3000 |
Silicon NPN common base transistor, high gain and efficiency, output power at frequencyes up to 3500MHz |
SGS Thomson Microelectronics |
| 243 |
300LD11 |
General-Purpose Silicon Rectifiers 350A |
TOSHIBA |
| 244 |
300LD11 |
Silicon alloy diffused junction rectifier 350A 800V |
TOSHIBA |
| 245 |
300ND11 |
General-Purpose Silicon Rectifiers 350A |
TOSHIBA |
| 246 |
300ND11 |
Silicon alloy diffused junction rectifier 350A 1000V |
TOSHIBA |
| 247 |
300QD11 |
General-Purpose Silicon Rectifiers 350A |
TOSHIBA |
| 248 |
300QD11 |
Silicon alloy diffused junction rectifier 350A 1200V |
TOSHIBA |
| 249 |
300TD11 |
General-Purpose Silicon Rectifiers 350A |
TOSHIBA |
| 250 |
300TD11 |
Silicon alloy diffused junction rectifier 350A 1500V |
TOSHIBA |
| 251 |
300WD11 |
General-Purpose Silicon Rectifiers 350A |
TOSHIBA |
| 252 |
300WD11 |
Silicon alloy diffused junction rectifier 350A 1800V |
TOSHIBA |
| 253 |
300YD11 |
General-Purpose Silicon Rectifiers 350A |
TOSHIBA |
| 254 |
300YD11 |
Silicon alloy diffused junction rectifier 350A 2000V |
TOSHIBA |
| 255 |
30FQ030 |
Diode Schottky 35V 30A 2-Pin DO-4 |
New Jersey Semiconductor |
| 256 |
30FQ035 |
V(rrm): 35V; 30A schottky power rectifier |
International Rectifier |
| 257 |
30KP350A |
Diode TVS Single Uni-Dir 350V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 258 |
30KP350CA |
Diode TVS Single Bi-Dir 350V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 259 |
30KPA350 |
Diode TVS Single Uni-Dir 350V 30KW 2-Pin Case P-600 |
New Jersey Semiconductor |
| 260 |
30KPA350A |
Diode TVS Single Uni-Dir 350V 30KW 2-Pin Case P-600 |
New Jersey Semiconductor |
| 261 |
30KPA350C |
Diode TVS Single Uni-Dir 350V 30KW 2-Pin Case P-600 |
New Jersey Semiconductor |
| 262 |
30KPA350CA |
Diode TVS Single Bi-Dir 350V 30KW 2-Pin Case P-600 |
New Jersey Semiconductor |
| 263 |
35MB05A |
Diode Rectifier Bridge Single 50V 35A 4-Pin D-34A |
New Jersey Semiconductor |
| 264 |
35MB100A |
V(rrm): 1000V; 35A rectifier bridge |
International Rectifier |
| 265 |
35MB100A |
Diode Rectifier Bridge Single 1KV 35A |
New Jersey Semiconductor |
| 266 |
35MB120A |
V(rrm): 1200V; 35A rectifier bridge |
International Rectifier |
| 267 |
35MB120A |
Diode Rectifier Bridge Single 1.2KV 35A 4-Pin |
New Jersey Semiconductor |
| 268 |
35PD10M |
The 35PD5M-TO, an InGaAs photodiode with a 5mm-diameter photosensitive packaged in a TO-5 header, is designed for applications in ... |
Anadigics Inc |
| 269 |
35PD1M-TO |
The 35PD1M-TO, an InGaAs photodiode with a 1mm-diameter photosensitive packaged in a TO-46 header, is designed for applications in ... |
Anadigics Inc |
| 270 |
36MB100A |
Diode Rectifier Bridge Single 1KV 35A 4-Pin D-34 |
New Jersey Semiconductor |
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