No. |
Part Name |
Description |
Manufacturer |
121 |
30KPA90 |
Diode TVS Single Uni-Dir 90V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
122 |
30KPA90A |
Diode TVS Single Uni-Dir 90V 30KW 2-Pin |
New Jersey Semiconductor |
123 |
30KPA90C |
Diode TVS Single Bi-Dir 90V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
124 |
30KPA90CA |
Diode TVS Single Bi-Dir 90V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
125 |
31DQ09 |
Diode Schottky 90V 3.3A 2-Pin Case C-16 Box |
New Jersey Semiconductor |
126 |
350PEQ90W |
V(rrm/drm): 900V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
127 |
3VR90 |
3 Watt Epoxy Silicon Zener Diode 90V |
Transitron Electronic |
128 |
40348 |
Silicon N-P-N transistor. 90V, 8.75W. |
General Electric Solid State |
129 |
40408 |
Silicon N-P-N power transistor. 90V. |
General Electric Solid State |
130 |
40411 |
Silicon N-P-N power transistor. 90V (Rbe 100Ohm). |
General Electric Solid State |
131 |
50SQ090 |
V(rrm): 90V; 5A schottky barrier rectifier |
International Rectifier |
132 |
53124 |
RADIATION TOLERANT, � 90V - 0.8A POWER MOSFET OPTOCOUPLER |
Micropac Industries |
133 |
53253 |
RADIATION TOLERANT, 90V - 0.8A DUAL POWER MOSFET OPTOCOUPLERS |
Micropac Industries |
134 |
5962-8863403 |
32kx8 EEPROM, High Speed CMOS, MIL-STD-883, 90ns |
Intersil |
135 |
5962-8863403UX |
256 (32K x 8) high speed parallel EEPROM, 90ns |
Atmel |
136 |
5962-8863403XX |
256 (32K x 8) high speed parallel EEPROM, 90ns |
Atmel |
137 |
5962-8863403YX |
256 (32K x 8) high speed parallel EEPROM, 90ns |
Atmel |
138 |
5962-8863403ZX |
256 (32K x 8) high speed parallel EEPROM, 90ns |
Atmel |
139 |
5962-8863404UX |
256 (32K x 8) high speed parallel EEPROM, 90ns |
Atmel |
140 |
5962-8863404XX |
256 (32K x 8) high speed parallel EEPROM, 90ns |
Atmel |
141 |
5962-8863404YX |
256 (32K x 8) high speed parallel EEPROM, 90ns |
Atmel |
142 |
5962-8863404ZX |
256 (32K x 8) high speed parallel EEPROM, 90ns |
Atmel |
143 |
5962-9314001HPA |
5962-9314001HPA · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler |
Agilent (Hewlett-Packard) |
144 |
5962-9314001HPC |
5962-9314001HPC · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler |
Agilent (Hewlett-Packard) |
145 |
5962-9314001HXA |
5962-9314001HXA · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler |
Agilent (Hewlett-Packard) |
146 |
5962-9314001HYA |
5962-9314001HYA · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler |
Agilent (Hewlett-Packard) |
147 |
5962-9314001HYC |
5962-9314001HYC · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler |
Agilent (Hewlett-Packard) |
148 |
5962-9314001HZA |
5962-9314001HZA · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler |
Agilent (Hewlett-Packard) |
149 |
5962-9314001HZC |
5962-9314001HZC · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler |
Agilent (Hewlett-Packard) |
150 |
5KP90 |
Diode TVS Single Uni-Dir 90V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
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