| No. |
Part Name |
Description |
Manufacturer |
| 91 |
2N6577 |
Trans Darlington Power Transistor 90V 15A 3-Pin (2+Tab) TO-3 |
New Jersey Semiconductor |
| 92 |
2N6661 |
Trans MOSFET N-CH 90V 0.35A 3-Pin TO-39 |
New Jersey Semiconductor |
| 93 |
2N6661 |
N-Channel 80-V and 90-V (D-S) MOSFETS |
Vishay |
| 94 |
2SA1080 |
Trans GP BJT PNP 90V 0.1A 3-Pin TO-92 |
New Jersey Semiconductor |
| 95 |
2SA1366 |
150mW SMD PNP transistor, maximum rating: -50V Vceo, -400mA Ic, 90 to 500 hFE. Complementary 2SC3441 |
Isahaya Electronics Corporation |
| 96 |
2SC3537 |
Class C, 900MHz 28V power transistor (This datasheet of NEM092081B-28 is also the datasheet of 2SC3537, see the Electrical Characteristics table) |
NEC |
| 97 |
2SC3538 |
Class C, 900MHz 28V power transistor (This datasheet of NEM094081B-28 is also the datasheet of 2SC3538, see the Electrical Characteristics table) |
NEC |
| 98 |
2SC3539 |
Class C, 900MHz 28V power transistor (This datasheet of NEM096081B-28 is also the datasheet of 2SC3539, see the Electrical Characteristics table) |
NEC |
| 99 |
2SC3581 |
900mW Lead frame NPN transistor, maximum rating: 50V Vceo, 400mA Ic, 90 to 500 hFE. Complementary 2SA1399 |
Isahaya Electronics Corporation |
| 100 |
2SC3675 |
NPN Triple Diffused Planar Silicon Transistor 900V/100mA High-Voltage Amplifier High-Voltage Switching Applications |
SANYO |
| 101 |
2SC3676 |
NPN Triple Diffused Planar Silicon Transistor 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications |
SANYO |
| 102 |
2SC4030 |
NPN Triple Diffused Planar Silicon Transistor 900V/50mA Switching Applications |
SANYO |
| 103 |
2SC4031 |
NPN Triple Diffused Planar Silicon Transistor 900V/20mA Switching Applications |
SANYO |
| 104 |
2SC4578 |
NPN Triple Diffused Planar Silicon Transistor 900V/50mA Switching Applications |
SANYO |
| 105 |
2SC4579 |
NPN Triple Diffused Planar Silicon Transistor 900V/20mA Switching Applications |
SANYO |
| 106 |
2SC4630LS |
NPN Triple Diffused Planar Silicon Transistor 900V / 100mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 107 |
2SC4631LS |
NPN Triple Diffused Planar Silicon Transistor 900V / 300mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 108 |
2SK1358 |
Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PN |
New Jersey Semiconductor |
| 109 |
2SK2484 |
Nch power MOSFET MP-25 900V/5A |
NEC |
| 110 |
2SK2597 |
N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
NEC |
| 111 |
2SK3077 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
TOSHIBA |
| 112 |
2SK3078 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
TOSHIBA |
| 113 |
2SK3079 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
TOSHIBA |
| 114 |
3032-6017-00 |
800-900 MHz, 3dB, 90 crossover hybrid coupler |
MA-Com |
| 115 |
3032-6018-00 |
890-960 MHz, 3dB, 90 crossover hybrid coupler |
MA-Com |
| 116 |
3032-6019-00 |
1700-1900 MHz, 3dB, 90 crossover hybrid coupler |
MA-Com |
| 117 |
30KP90 |
Diode TVS Single Uni-Dir 90V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 118 |
30KP90A |
Diode TVS Single Uni-Dir 90V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 119 |
30KP90C |
Diode TVS Single Bi-Dir 90V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 120 |
30KP90CA |
Diode TVS Single Bi-Dir 90V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
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