| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N3637 |
Rectifier Diode 900V |
Motorola |
| 32 |
1N3672 |
Rectifier Diode 12A 900V |
Motorola |
| 33 |
1N3672A |
Rectifier Diode 12A 900V |
Motorola |
| 34 |
1N3767 |
Diode Switching 900V 40A 2-Pin DO-5 |
New Jersey Semiconductor |
| 35 |
1N3989 |
6A 900V Rectifier Diode |
Motorola |
| 36 |
1N4014 |
Rectifier Diode 900V 12A |
Motorola |
| 37 |
1N4055 |
Rectifier Diode 900V |
Motorola |
| 38 |
1N4055 |
Diode 900V 275A 2-Pin DO-9 |
New Jersey Semiconductor |
| 39 |
1N4361 |
Rectifier Diode 0.5A 900V |
Motorola |
| 40 |
1N5125 |
Zener Diode 90V 3W |
Motorola |
| 41 |
1N6064 |
Diode TVS Single Bi-Dir 90V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 42 |
1N6375 |
10.00V; 90A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 43 |
1N6383 |
10.00V; 90A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 44 |
1N67A |
Diode 90V 0.05A |
New Jersey Semiconductor |
| 45 |
1N85 |
Photosensitive Device; IR(dark)=20uA 90V, Sensiviry = 0.35uA/mW 90V |
Motorola |
| 46 |
1N85 |
Photosensitive Device; IR(dark)=20uA 90V, Sensiviry = 0.35uA/mW 90V |
Motorola |
| 47 |
1N855 |
Rectifier Diode 900V |
Motorola |
| 48 |
1N866 |
Rectifier Diode 900V |
Motorola |
| 49 |
1N877 |
Rectifier Diode 900V |
Motorola |
| 50 |
1N888 |
Rectifier Diode 900V |
Motorola |
| 51 |
2020-900 |
Delay 900 +/-18 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 52 |
2322 640 90004/98004 |
NTC Thermistors, Molded Range |
Vishay |
| 53 |
2322 640 90042 |
NTC Thermistors, Steel Capped Sensors |
Vishay |
| 54 |
2322 640 90059 |
NTC Thermistors, Long Insulated Leads |
Vishay |
| 55 |
2322 645 90028 |
NTC Thermistors, Long Non-Insulated Leads |
Vishay |
| 56 |
2322 691 90001 |
Humidity Sensor |
Vishay |
| 57 |
2N1803 |
Thyristor SCR 900V 1.6KA 3-Pin TO-83 |
New Jersey Semiconductor |
| 58 |
2N2405 |
Trans GP BJT NPN 90V 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 59 |
2N2896 |
1.800W General Purpose NPN Metal Can Transistor. 90V Vceo, 1.000A Ic, 35 hFE. |
Continental Device India Limited |
| 60 |
2N2896 |
Trans GP BJT NPN 90V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| | | |
