No. |
Part Name |
Description |
Manufacturer |
61 |
2N3055HV |
90.000W Power NPN Metal Can Transistor. 100V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
62 |
2N3251A |
0.360W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.200A Ic, 90 hFE. |
Continental Device India Limited |
63 |
2N3261 |
Trans GP BJT NPN 90V 25A 3-Pin TO-63 |
New Jersey Semiconductor |
64 |
2N3262 |
Trans GP BJT NPN 90V 25A 3-Pin TO-63 |
New Jersey Semiconductor |
65 |
2N3265 |
Trans GP BJT NPN 90V 25A 3-Pin TO-63 |
New Jersey Semiconductor |
66 |
2N3798A |
Trans GP BJT NPN 90V 3-Pin TO-18 Box |
New Jersey Semiconductor |
67 |
2N5014 |
Trans GP BJT NPN 900V 0.5A 3-Pin TO-39 |
New Jersey Semiconductor |
68 |
2N5038 |
20A NPN silicon power metal transistor 90V 140W |
Motorola |
69 |
2N5038 |
Trans GP BJT NPN 90V 20A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
70 |
2N5088 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.050A Ic, 300 - 900 hFE |
Continental Device India Limited |
71 |
2N5329 |
Trans GP BJT NPN 90V 20A 3-Pin TO-61 |
New Jersey Semiconductor |
72 |
2N5330 |
Trans GP BJT NPN 90V 30A 3-Pin TO-61 |
New Jersey Semiconductor |
73 |
2N5496 |
Silicon N-P-N VERSAWATT transistor. 90V, 50W. |
General Electric Solid State |
74 |
2N5497 |
Silicon N-P-N VERSAWATT transistor. 90V, 50W. |
General Electric Solid State |
75 |
2N5671 |
Trans GP BJT NPN 90V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
76 |
2N5862 |
NPN silicon RF power transistor 90W peak - 150MHz |
Motorola |
77 |
2N5980 |
8A Power PNP silicon transistor 90W |
Motorola |
78 |
2N5981 |
8A Power PNP silicon transistor 90W |
Motorola |
79 |
2N5982 |
8A Power PNP silicon transistor 90W |
Motorola |
80 |
2N5983 |
8A power NPN silicon transistor 90W |
Motorola |
81 |
2N5984 |
8A power NPN silicon transistor 90W |
Motorola |
82 |
2N5985 |
8A power NPN silicon transistor 90W |
Motorola |
83 |
2N6315 |
Power NPN silicon transistor. 7.0 A, 60 V, 90 W. |
Motorola |
84 |
2N6316 |
Power NPN silicon transistor. 7.0 A, 80 V, 90 W. |
Motorola |
85 |
2N6317 |
Power PNP silicon transistor. 7.0 A, 60 V, 90 W. |
Motorola |
86 |
2N6318 |
Power PNP silicon transistor. 7.0 A, 80 V, 90 W. |
Motorola |
87 |
2N6488 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 90V. |
General Electric Solid State |
88 |
2N6500 |
Trans GP BJT PNP 90V 4A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
89 |
2N650A |
Trans GP BJT PNP 90V 4A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
90 |
2N6577 |
15 A N-P-N darlington power transistor. 90 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
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