No. |
Part Name |
Description |
Manufacturer |
61 |
2N3265 |
Trans GP BJT NPN 90V 25A 3-Pin TO-63 |
New Jersey Semiconductor |
62 |
2N3798A |
Trans GP BJT NPN 90V 3-Pin TO-18 Box |
New Jersey Semiconductor |
63 |
2N5014 |
Trans GP BJT NPN 900V 0.5A 3-Pin TO-39 |
New Jersey Semiconductor |
64 |
2N5038 |
20A NPN silicon power metal transistor 90V 140W |
Motorola |
65 |
2N5038 |
Trans GP BJT NPN 90V 20A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
66 |
2N5088 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.050A Ic, 300 - 900 hFE |
Continental Device India Limited |
67 |
2N5329 |
Trans GP BJT NPN 90V 20A 3-Pin TO-61 |
New Jersey Semiconductor |
68 |
2N5330 |
Trans GP BJT NPN 90V 30A 3-Pin TO-61 |
New Jersey Semiconductor |
69 |
2N5496 |
Silicon N-P-N VERSAWATT transistor. 90V, 50W. |
General Electric Solid State |
70 |
2N5497 |
Silicon N-P-N VERSAWATT transistor. 90V, 50W. |
General Electric Solid State |
71 |
2N5671 |
Trans GP BJT NPN 90V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
72 |
2N6315 |
Power NPN silicon transistor. 7.0 A, 60 V, 90 W. |
Motorola |
73 |
2N6316 |
Power NPN silicon transistor. 7.0 A, 80 V, 90 W. |
Motorola |
74 |
2N6317 |
Power PNP silicon transistor. 7.0 A, 60 V, 90 W. |
Motorola |
75 |
2N6318 |
Power PNP silicon transistor. 7.0 A, 80 V, 90 W. |
Motorola |
76 |
2N6488 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 90V. |
General Electric Solid State |
77 |
2N6500 |
Trans GP BJT PNP 90V 4A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
78 |
2N650A |
Trans GP BJT PNP 90V 4A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
79 |
2N6577 |
15 A N-P-N darlington power transistor. 90 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
80 |
2N6577 |
Trans Darlington Power Transistor 90V 15A 3-Pin (2+Tab) TO-3 |
New Jersey Semiconductor |
81 |
2N6661 |
Trans MOSFET N-CH 90V 0.35A 3-Pin TO-39 |
New Jersey Semiconductor |
82 |
2N6661 |
N-Channel 80-V and 90-V (D-S) MOSFETS |
Vishay |
83 |
2SA1080 |
Trans GP BJT PNP 90V 0.1A 3-Pin TO-92 |
New Jersey Semiconductor |
84 |
2SA1366 |
150mW SMD PNP transistor, maximum rating: -50V Vceo, -400mA Ic, 90 to 500 hFE. Complementary 2SC3441 |
Isahaya Electronics Corporation |
85 |
2SC3581 |
900mW Lead frame NPN transistor, maximum rating: 50V Vceo, 400mA Ic, 90 to 500 hFE. Complementary 2SA1399 |
Isahaya Electronics Corporation |
86 |
2SC3675 |
NPN Triple Diffused Planar Silicon Transistor 900V/100mA High-Voltage Amplifier High-Voltage Switching Applications |
SANYO |
87 |
2SC3676 |
NPN Triple Diffused Planar Silicon Transistor 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications |
SANYO |
88 |
2SC4030 |
NPN Triple Diffused Planar Silicon Transistor 900V/50mA Switching Applications |
SANYO |
89 |
2SC4031 |
NPN Triple Diffused Planar Silicon Transistor 900V/20mA Switching Applications |
SANYO |
90 |
2SC4578 |
NPN Triple Diffused Planar Silicon Transistor 900V/50mA Switching Applications |
SANYO |
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