DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for RF6

Datasheets found :: 820
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |
No. Part Name Description Manufacturer
121 IRAC5001-HS100A +12V, 100A continuous current active OR-ing design kit featuring IR5001S and IRF6609 International Rectifier
122 IRAC5001-HS48V 48V, 50A continuous current OR-ing function design kit featuring IR5001S and IRF6644 International Rectifier
123 IRAUDAMP5 120W x 2 Channel Class D Audio Power Amplifier Using the IRS2092S and IRF6645 International Rectifier
124 IRAUDAMP8 120W x 4 Channel Class D Audio Power Amplifier Using the IRS2093M and IRF6665 International Rectifier
125 IRDC2085S-DF DC Bus Converter using IRF6603 secondary DirectFETs International Rectifier
126 IRDC2086S-DF Full bridge DC Bus Converter using IRF7493 & IRF6603 FETs International Rectifier
127 IRDC5001-LS370W 370W, -48V dual input active OR-ing design kit featuring IR5001S and IRF6644 International Rectifier
128 IRF610 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET Fairchild Semiconductor
129 IRF610 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
130 IRF610 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package International Rectifier
131 IRF610 3.3A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET Intersil
132 IRF610 Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB New Jersey Semiconductor
133 IRF610 N-Channel Power MOSFET Samsung Electronic
134 IRF610 MOSPOWER N-Channel Enhancement Mode Transistor 200V 2.5A Siliconix
135 IRF610-613 N-Channel Power MOSFETs/ 3.5A/ 150-200V Fairchild Semiconductor
136 IRF6100 -20V Single P-Channel HEXFET Power MOSFET in a 4-Lead FlipFET package International Rectifier
137 IRF6100PBF -20V Single P-Channel HEXFET Power MOSFET in a 4-Lead FlipFET package International Rectifier
138 IRF6100TR -20V Single P-Channel HEXFET Power MOSFET in a 4-Lead FlipFET package International Rectifier
139 IRF610B 200V N-Channel MOSFET Fairchild Semiconductor
140 IRF610B_FP001 200V N-Channel B-FET / Substitute of IRF610 & IRF610A Fairchild Semiconductor
141 IRF610B_FP001 200V N-Channel B-FET / Substitute of IRF610 & IRF610A Fairchild Semiconductor
142 IRF610B_FP001 200V N-Channel B-FET / Substitute of IRF610 & IRF610A Fairchild Semiconductor
143 IRF610PBF 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package International Rectifier
144 IRF610R Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB New Jersey Semiconductor
145 IRF610S 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
146 IRF610S Trans MOSFET N-CH 200V 3.3A 3-Pin(2+Tab) D2PAK New Jersey Semiconductor
147 IRF610STRL 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
148 IRF610STRR 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
149 IRF611 N-Channel Power MOSFETs/ 3.5A/ 150-200V Fairchild Semiconductor
150 IRF611 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State


Datasheets found :: 820
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



© 2024 - www Datasheet Catalog com