| No. |
Part Name |
Description |
Manufacturer |
| 211 |
IRF6217PBF-1 |
-150V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 212 |
IRF6217TR |
-150V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 213 |
IRF6217TRPBF |
-150V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 214 |
IRF6217TRPBF-1 |
-150V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 215 |
IRF6218 |
-150V Single P-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 216 |
IRF6218L |
-150V Single P-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 217 |
IRF6218PBF |
-150V Single P-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 218 |
IRF6218S |
-150V Single P-Channel HEXFET Power MOSFET in a D2Pak package |
International Rectifier |
| 219 |
IRF6218STRLPBF |
-150V Single P-Channel HEXFET Power MOSFET in a D2Pak package |
International Rectifier |
| 220 |
IRF622 |
N-Channel Power MOSFETs/ 7A/ 150-200V |
Fairchild Semiconductor |
| 221 |
IRF622 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 222 |
IRF622 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 4A |
Siliconix |
| 223 |
IRF623 |
N-Channel Power MOSFETs/ 7A/ 150-200V |
Fairchild Semiconductor |
| 224 |
IRF623 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 225 |
IRF623 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 4A |
Siliconix |
| 226 |
IRF624 |
250V N-Channel MOSFET |
Fairchild Semiconductor |
| 227 |
IRF624 |
250V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 228 |
IRF624B |
250V N-Channel MOSFET |
Fairchild Semiconductor |
| 229 |
IRF624B_FP001 |
250V N-Channel B-FET / Substitute of IRF624 & IRF624A |
Fairchild Semiconductor |
| 230 |
IRF624B_FP001 |
250V N-Channel B-FET / Substitute of IRF624 & IRF624A |
Fairchild Semiconductor |
| 231 |
IRF624B_FP001 |
250V N-Channel B-FET / Substitute of IRF624 & IRF624A |
Fairchild Semiconductor |
| 232 |
IRF624S |
250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 233 |
IRF624STRL |
250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 234 |
IRF624STRR |
250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 235 |
IRF630 |
9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs |
Fairchild Semiconductor |
| 236 |
IRF630 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
| 237 |
IRF630 |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 238 |
IRF630 |
9A/ 200V/ 0.400 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 239 |
IRF630 |
Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220 Tube |
New Jersey Semiconductor |
| 240 |
IRF630 |
N-channel TrenchMOS(tm) transistor |
Philips |
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