| No. |
Part Name |
Description |
Manufacturer |
| 12811 |
IRF150 |
N-Channel Power MOSFETs/ 40 A/ 60 V/100 V |
Fairchild Semiconductor |
| 12812 |
IRF150 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 40A. |
General Electric Solid State |
| 12813 |
IRF150 |
100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package |
International Rectifier |
| 12814 |
IRF150 |
40A/ 100V/ 0.055 Ohm/ N-Channel Power MOSFET |
Intersil |
| 12815 |
IRF150 |
Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 12816 |
IRF150 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 12817 |
IRF150 |
N-CHANNEL POWER MOSFET |
SemeLAB |
| 12818 |
IRF150 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 40A |
Siliconix |
| 12819 |
IRF150-153 |
N-Channel Power MOSFETs/ 40 A/ 60 V/100 V |
Fairchild Semiconductor |
| 12820 |
IRF1503 |
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 12821 |
IRF1503L |
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 12822 |
IRF1503LPBF |
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 12823 |
IRF1503PBF |
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 12824 |
IRF1503S |
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 12825 |
IRF1503STRLPBF |
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 12826 |
IRF150CF |
Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 12827 |
IRF150SMD |
N-CHANNEL POWER MOSFET |
SemeLAB |
| 12828 |
IRF151 |
N-Channel Power MOSFETs/ 40 A/ 60 V/100 V |
Fairchild Semiconductor |
| 12829 |
IRF151 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 40A. |
General Electric Solid State |
| 12830 |
IRF151 |
33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs |
Intersil |
| 12831 |
IRF151 |
Trans MOSFET N-CH 80V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 12832 |
IRF151 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 12833 |
IRF151 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 40A |
Siliconix |
| 12834 |
IRF152 |
N-Channel Power MOSFETs/ 40 A/ 60 V/100 V |
Fairchild Semiconductor |
| 12835 |
IRF152 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A. |
General Electric Solid State |
| 12836 |
IRF152 |
33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs |
Intersil |
| 12837 |
IRF152 |
Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 12838 |
IRF152 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 12839 |
IRF152 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 33A |
Siliconix |
| 12840 |
IRF152R |
Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
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