| No. |
Part Name |
Description |
Manufacturer |
| 12871 |
IRF222 |
N-Channel Power MOSFETs/ 7A/ 150-200V |
Fairchild Semiconductor |
| 12872 |
IRF222 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 12873 |
IRF222 |
4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 12874 |
IRF222 |
Trans MOSFET N-CH 200V 4A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 12875 |
IRF222 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 12876 |
IRF223 |
N-Channel Power MOSFETs/ 7A/ 150-200V |
Fairchild Semiconductor |
| 12877 |
IRF223 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 12878 |
IRF223 |
4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 12879 |
IRF223 |
Trans MOSFET N-CH 150V 4A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 12880 |
IRF223 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 12881 |
IRF230 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 12882 |
IRF230 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
| 12883 |
IRF230 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
| 12884 |
IRF230 |
8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 12885 |
IRF230 |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 12886 |
IRF230 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 12887 |
IRF230 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET |
SemeLAB |
| 12888 |
IRF230 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 9A |
Siliconix |
| 12889 |
IRF230-233 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 12890 |
IRF230N |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 12891 |
IRF231 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 12892 |
IRF231 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
| 12893 |
IRF231 |
8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 12894 |
IRF231 |
Trans MOSFET N-CH 150V 9A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 12895 |
IRF231 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 12896 |
IRF231 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 9A |
Siliconix |
| 12897 |
IRF231R |
Trans MOSFET N-CH 150V 9A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 12898 |
IRF232 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 12899 |
IRF232 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 12900 |
IRF232 |
8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs |
Intersil |
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