| No. |
Part Name |
Description |
Manufacturer |
| 12931 |
IRF242 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 16A |
Siliconix |
| 12932 |
IRF243 |
N-Channel Power MOSFETs/ 18A/ 150-200V |
Fairchild Semiconductor |
| 12933 |
IRF243 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. |
General Electric Solid State |
| 12934 |
IRF243 |
16A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs |
Intersil |
| 12935 |
IRF243 |
N-CHANNEL POWER MOSFET |
Samsung Electronic |
| 12936 |
IRF243 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 16A |
Siliconix |
| 12937 |
IRF244 |
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 12938 |
IRF245 |
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 12939 |
IRF246 |
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 12940 |
IRF247 |
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 12941 |
IRF250 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
| 12942 |
IRF250 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package |
International Rectifier |
| 12943 |
IRF250 |
30A/ 200V/ 0.085 Ohm/ N-Channel Power MOSFET |
Intersil |
| 12944 |
IRF250 |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 12945 |
IRF250 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 12946 |
IRF250 |
N-CHANNEL POWER MOSFET |
SemeLAB |
| 12947 |
IRF250 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 30A |
Siliconix |
| 12948 |
IRF250CF |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 12949 |
IRF250FI |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 12950 |
IRF250R |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 12951 |
IRF251 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
| 12952 |
IRF251 |
25A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETs |
Intersil |
| 12953 |
IRF251 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 12954 |
IRF251 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 30A |
Siliconix |
| 12955 |
IRF252 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 25A. |
General Electric Solid State |
| 12956 |
IRF252 |
25A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETs |
Intersil |
| 12957 |
IRF252 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 12958 |
IRF252 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 25A |
Siliconix |
| 12959 |
IRF253 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 25A. |
General Electric Solid State |
| 12960 |
IRF253 |
25A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETs |
Intersil |
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