| No. |
Part Name |
Description |
Manufacturer |
| 12841 |
IRF153 |
N-Channel Power MOSFETs/ 40 A/ 60 V/100 V |
Fairchild Semiconductor |
| 12842 |
IRF153 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 33A. |
General Electric Solid State |
| 12843 |
IRF153 |
33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs |
Intersil |
| 12844 |
IRF153 |
Trans MOSFET N-CH 80V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 12845 |
IRF153 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 12846 |
IRF153 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 33A |
Siliconix |
| 12847 |
IRF153R |
Trans MOSFET N-CH 80V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 12848 |
IRF1607 |
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 12849 |
IRF1607PBF |
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 12850 |
IRF1902 |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 12851 |
IRF1902TR |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 12852 |
IRF1902TRPBF |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 12853 |
IRF1902UPBF |
20V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market |
International Rectifier |
| 12854 |
IRF220 |
N-Channel Power MOSFETs/ 7A/ 150-200V |
Fairchild Semiconductor |
| 12855 |
IRF220 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
| 12856 |
IRF220 |
4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 12857 |
IRF220 |
Trans MOSFET N-CH 200V 5A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 12858 |
IRF220 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 12859 |
IRF220-223 |
N-Channel Power MOSFETs/ 7A/ 150-200V |
Fairchild Semiconductor |
| 12860 |
IRF2204 |
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 12861 |
IRF2204L |
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 12862 |
IRF2204LPBF |
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 12863 |
IRF2204PBF |
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 12864 |
IRF2204S |
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 12865 |
IRF2204SPBF |
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 12866 |
IRF221 |
N-Channel Power MOSFETs/ 7A/ 150-200V |
Fairchild Semiconductor |
| 12867 |
IRF221 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
| 12868 |
IRF221 |
4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 12869 |
IRF221 |
Trans MOSFET N-CH 150V 5A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 12870 |
IRF221 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| | | |
