| No. |
Part Name |
Description |
Manufacturer |
| 13051 |
IRF322 |
2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 13052 |
IRF322 |
Trans MOSFET N-CH 400V 2.8A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 13053 |
IRF322 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 13054 |
IRF323 |
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V |
Fairchild Semiconductor |
| 13055 |
IRF323 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 13056 |
IRF323 |
2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 13057 |
IRF323 |
Trans MOSFET N-CH 350V 2.8A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 13058 |
IRF323 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 13059 |
IRF330 |
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
| 13060 |
IRF330 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 13061 |
IRF330 |
400V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
| 13062 |
IRF330 |
5.5A/ 400V/ 1.000 Ohm/ N-Channel Power MOSFET |
Intersil |
| 13063 |
IRF330 |
Trans MOSFET N-CH 400V 5.5A 3-Pin(2+Tab) TO-204AA |
New Jersey Semiconductor |
| 13064 |
IRF330 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 13065 |
IRF330 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 5.5A |
Siliconix |
| 13066 |
IRF330-333 |
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
| 13067 |
IRF3305 |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 13068 |
IRF3305PBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 13069 |
IRF330R |
Trans MOSFET N-CH 55V 140A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 13070 |
IRF331 |
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
| 13071 |
IRF331 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 13072 |
IRF331 |
4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs |
Intersil |
| 13073 |
IRF331 |
Trans MOSFET N-CH 350V 5.5A 3-Pin (2+Tab) TO-3 |
New Jersey Semiconductor |
| 13074 |
IRF331 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 13075 |
IRF331 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 5.5A |
Siliconix |
| 13076 |
IRF3315 |
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 13077 |
IRF3315L |
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 13078 |
IRF3315L |
Trans MOSFET N-CH 150V 21A 3-Pin(3+Tab) TO-262 |
New Jersey Semiconductor |
| 13079 |
IRF3315LPBF |
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 13080 |
IRF3315PBF |
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
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