| No. |
Part Name |
Description |
Manufacturer |
| 13141 |
IRF351 |
Trans MOSFET N-CH 350V 13A 3-Pin(2+Tab) TO-204AA |
New Jersey Semiconductor |
| 13142 |
IRF351 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 13143 |
IRF351 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 15A |
Siliconix |
| 13144 |
IRF3515L |
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 13145 |
IRF3515LPBF |
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 13146 |
IRF3515S |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13147 |
IRF3515SPBF |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13148 |
IRF3515STRL |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13149 |
IRF3515STRLPBF |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13150 |
IRF3515STRR |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13151 |
IRF352 |
N-Channel Power MOSFETs/ 15A/ 350V/400V |
Fairchild Semiconductor |
| 13152 |
IRF352 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
| 13153 |
IRF352 |
13.0A and 15.0A, 350 and 400V, 0.300 and 0.400 ohm, Avalanche Rated*, N-Channel Power MOSFET FN1826.2 |
Intersil |
| 13154 |
IRF352 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 13155 |
IRF352 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 13A |
Siliconix |
| 13156 |
IRF353 |
N-Channel Power MOSFETs/ 15A/ 350V/400V |
Fairchild Semiconductor |
| 13157 |
IRF353 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
| 13158 |
IRF353 |
13.0A and 15.0A, 350 and 400V, 0.300 and 0.400 ohm, Avalanche Rated*, N-Channel Power MOSFET FN1826.2 |
Intersil |
| 13159 |
IRF353 |
Trans MOSFET N-CH 350V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 13160 |
IRF353 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 13161 |
IRF353 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 13A |
Siliconix |
| 13162 |
IRF3546M |
60A Dual Integrated Power Block. Two Pairs of High Performance Control and Synchronous MOSFETs. 25V Quad N-Channel HEXFET Power MOSFET |
International Rectifier |
| 13163 |
IRF3546MTRPBF |
60A Dual Integrated Power Block. Two Pairs of High Performance Control and Synchronous MOSFETs. 25V Quad N-Channel HEXFET Power MOSFET |
International Rectifier |
| 13164 |
IRF360 |
400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package |
International Rectifier |
| 13165 |
IRF3610S |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13166 |
IRF3610STRLPBF |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13167 |
IRF3703 |
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 13168 |
IRF3703PBF |
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 13169 |
IRF3704 |
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 13170 |
IRF3704L |
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
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