| No. |
Part Name |
Description |
Manufacturer |
| 13111 |
IRF3415L |
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 13112 |
IRF3415LPBF |
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 13113 |
IRF3415PBF |
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 13114 |
IRF3415S |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13115 |
IRF3415SPBF |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13116 |
IRF3415STRL |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13117 |
IRF3415STRLPBF |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13118 |
IRF3415STRR |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13119 |
IRF341IRF342 |
10A and 8.3A, 400V and 350V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs |
Intersil |
| 13120 |
IRF341R |
Trans MOSFET N-CH 150V 43A 3-Pin(2+Tab) D2PAK |
New Jersey Semiconductor |
| 13121 |
IRF342 |
N-Channel Power MOSFETs/ 10A/ 350V/400V |
Fairchild Semiconductor |
| 13122 |
IRF342 |
Trans MOSFET N-CH 400V 8A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 13123 |
IRF342 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 13124 |
IRF342 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 8A |
Siliconix |
| 13125 |
IRF343 |
N-Channel Power MOSFETs/ 10A/ 350V/400V |
Fairchild Semiconductor |
| 13126 |
IRF343 |
10A and 8.3A, 400V and 350V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs |
Intersil |
| 13127 |
IRF343 |
Trans MOSFET N-CH 350V 8.3A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 13128 |
IRF343 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 13129 |
IRF343 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 8A |
Siliconix |
| 13130 |
IRF350 |
N-Channel Power MOSFETs/ 15A/ 350V/400V |
Fairchild Semiconductor |
| 13131 |
IRF350 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 15A. |
General Electric Solid State |
| 13132 |
IRF350 |
400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package |
International Rectifier |
| 13133 |
IRF350 |
15A/ 400V/ 0.300 Ohm/ N-Channel Power MOSFET |
Intersil |
| 13134 |
IRF350 |
Trans MOSFET N-CH 400V 14A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 13135 |
IRF350 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 13136 |
IRF350 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 15A |
Siliconix |
| 13137 |
IRF350-353 |
N-Channel Power MOSFETs/ 15A/ 350V/400V |
Fairchild Semiconductor |
| 13138 |
IRF351 |
N-Channel Power MOSFETs/ 15A/ 350V/400V |
Fairchild Semiconductor |
| 13139 |
IRF351 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 15A. |
General Electric Solid State |
| 13140 |
IRF351 |
13.0A and 15.0A, 350 and 400V, 0.300 and 0.400 ohm, Avalanche Rated*, N-Channel Power MOSFET FN1826.2 |
Intersil |
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