| No. |
Part Name |
Description |
Manufacturer |
| 13021 |
IRF320 |
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V |
Fairchild Semiconductor |
| 13022 |
IRF320 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A. |
General Electric Solid State |
| 13023 |
IRF320 |
2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 13024 |
IRF320 |
Trans MOSFET N-CH 400V 3.3A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 13025 |
IRF320 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 13026 |
IRF320-323 |
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V |
Fairchild Semiconductor |
| 13027 |
IRF3205 |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 13028 |
IRF3205L |
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 13029 |
IRF3205LPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 13030 |
IRF3205PBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 13031 |
IRF3205S |
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13032 |
IRF3205SPBF |
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13033 |
IRF3205STRL |
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13034 |
IRF3205STRLPBF |
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13035 |
IRF3205STRR |
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13036 |
IRF3205VPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 13037 |
IRF3205Z |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package |
International Rectifier |
| 13038 |
IRF3205ZL |
55V Single N-Channel HEXFET Power MOSFET in a TO-262 Package |
International Rectifier |
| 13039 |
IRF3205ZLPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-262 Package |
International Rectifier |
| 13040 |
IRF3205ZPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package |
International Rectifier |
| 13041 |
IRF3205ZS |
55V Single N-Channel HEXFET Power MOSFET in a D2Pak Package |
International Rectifier |
| 13042 |
IRF3205ZSPBF |
55V Single N-Channel HEXFET Power MOSFET in a D2Pak Package |
International Rectifier |
| 13043 |
IRF3205ZSTRLPBF |
55V Single N-Channel HEXFET Power MOSFET in a D2Pak Package |
International Rectifier |
| 13044 |
IRF321 |
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V |
Fairchild Semiconductor |
| 13045 |
IRF321 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A. |
General Electric Solid State |
| 13046 |
IRF321 |
2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 13047 |
IRF321 |
Trans MOSFET N-CH 350V 3.3A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 13048 |
IRF321 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 13049 |
IRF322 |
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V |
Fairchild Semiconductor |
| 13050 |
IRF322 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
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