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Datasheets for CURRENT

Datasheets found :: 39852
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No. Part Name Description Manufacturer
1381 2N4117 N-Channel FETs - Ultra Low Input Current AMPS National Semiconductor
1382 2N4117A N-Channel FETs - Ultra Low Input Current AMPS National Semiconductor
1383 2N4118 N-Channel FETs - Ultra Low Input Current AMPS National Semiconductor
1384 2N4118A N-Channel FETs - Ultra Low Input Current AMPS National Semiconductor
1385 2N4119 N-Channel FETs - Ultra Low Input Current AMPS National Semiconductor
1386 2N4119A N-Channel FETs - Ultra Low Input Current AMPS National Semiconductor
1387 2N4348 HIGH VOLTAGE, HIGH CURRENT POWER TRANSISTORS General Electric Solid State
1388 2N4348 Silicon HOMETAXIAL NPN transistor, high current, high voltage amplifier SGS-ATES
1389 2N4427 ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W SGS Thomson Microelectronics
1390 2N4427 ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W SGS Thomson Microelectronics
1391 2N5038 High current, high power, high speed silicon N-P-N planar transistor. General Electric Solid State
1392 2N5038 HIGH CURRENT NPN SILICON TRANSISTOR SGS Thomson Microelectronics
1393 2N5038 HIGH CURRENT NPN SILICON TRANSISTOR SGS Thomson Microelectronics
1394 2N5038 HIGH CURRENT NPN SILICON TRANSISTOR ST Microelectronics
1395 2N5039 High current, high power, high speed silicon N-P-N planar transistor. General Electric Solid State
1396 2N5301 High current, high power, high speed N-P-N power transistor. 40V, 200W. General Electric Solid State
1397 2N5302 High current, high power, high speed N-P-N power transistor. 60V, 200W. General Electric Solid State
1398 2N5303 High current, high power, high speed N-P-N power transistor. 80V, 200W. General Electric Solid State
1399 2N5884 hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 SGS Thomson Microelectronics
1400 2N5884 hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 SGS Thomson Microelectronics
1401 2N5886 HIGH CURRENT SILICON NPN POWER TRANSISTOR SGS Thomson Microelectronics
1402 2N6496 High current, high power, high speed silicon N-P-N planar transistor. General Electric Solid State
1403 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
1404 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
1405 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
1406 2N6758 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
1407 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
1408 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
1409 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
1410 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State


Datasheets found :: 39852
Page: | 43 | 44 | 45 | 46 | 47 | 48 | 49 | 50 | 51 |



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