| No. |
Part Name |
Description |
Manufacturer |
| 1441 |
2SA928A |
PNP transistor for audio power amplifier, collector-emitter voltage=30V, collector current =2A |
Unisonic Technologies |
| 1442 |
2SB1018 |
Silicon PNP triple diffused high current switching transistor |
TOSHIBA |
| 1443 |
2SB1018A |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 1444 |
2SB1019 |
Silicon PNP triple diffused high current switching transistor |
TOSHIBA |
| 1445 |
2SB1031 |
SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER HIGH CURRENT SWITCHING |
Hitachi Semiconductor |
| 1446 |
2SB1168 |
PNP Epitaxial Planar Silicon Transistors Large Current Switching Applications |
SANYO |
| 1447 |
2SB1450 |
High Current Switching Transistor |
ON Semiconductor |
| 1448 |
2SB553 |
Silicon PNP triple diffused high current switching transistor |
TOSHIBA |
| 1449 |
2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A. |
USHA India LTD |
| 1450 |
2SB753 |
Silicon PNP triple diffused high current switching transistor |
TOSHIBA |
| 1451 |
2SB754 |
HIGH CURRENT SWITCHING/ POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1452 |
2SB833 |
Silicon PNP triple diffused darlington power, high current switching transistor |
TOSHIBA |
| 1453 |
2SB992 |
Silicon PNP triple diffused high current switching power transistor, complementary to 2SD1362 |
TOSHIBA |
| 1454 |
2SB993 |
Silicon PNP triple diffused high current switching power transistor |
TOSHIBA |
| 1455 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 1456 |
2SC1009 |
High voltage amplifier. Collector-base voltage Vcbo = 160V. Collector-emitter voltage Vceo = 140V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 1457 |
2SC1674 |
TV PIF amplifier, FM tuner RF amplifier, mixer, occillator. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 20mA. |
USHA India LTD |
| 1458 |
2SC1675 |
FM/AM RF amplifier, mixer, converter, oscillator,IF. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 50mA. |
USHA India LTD |
| 1459 |
2SC1845 |
Audio frequency low noise amplifier. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 120V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 50mA. |
USHA India LTD |
| 1460 |
2SC2001 |
Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 7 |
USHA India LTD |
| 1461 |
2SC2233 |
NPN silicon plastic power transistor. Designed for use in B/W TV horizontal deflection output. Vcbo =200V, DC current gain: 20 @ Ic = 4A. Pd = 40W. |
USHA India LTD |
| 1462 |
2SC2750 |
High Speed High Current Switching Industrial Use |
Unknow |
| 1463 |
2SC3074 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Current Switching Applications |
TOSHIBA |
| 1464 |
2SC3239 |
Silicon NPN epitaxial high current switching transistor |
TOSHIBA |
| 1465 |
2SC3303 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Current Switching Applications DC-DC Converter Applications |
TOSHIBA |
| 1466 |
2SC3308 |
Silicon NPN epitaxial high current switching transistor |
TOSHIBA |
| 1467 |
2SC3346 |
Silicon NPN Epitaxial Type / High Current Switching Applications |
TOSHIBA |
| 1468 |
2SC3381 |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE/ CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE/ MAIN AMPLIFIERS) |
TOSHIBA |
| 1469 |
2SC3440 |
HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1470 |
2SC3443 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| | | |
