| No. |
Part Name |
Description |
Manufacturer |
| 1471 |
2SC3709 |
NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS) |
TOSHIBA |
| 1472 |
2SC3709A |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
| 1473 |
2SC3710 |
NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS) |
TOSHIBA |
| 1474 |
2SC3710A |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
| 1475 |
2SC3728 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1476 |
2SC4356 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1477 |
2SC4881 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE. HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
| 1478 |
2SC5076 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS). HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
| 1479 |
2SC5175 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE. HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
| 1480 |
2SC5176 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. |
TOSHIBA |
| 1481 |
2SC5212 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1482 |
2SC5485 |
FOR HIGH CURRENT APPLICATION SILICON NPN EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
| 1483 |
2SC5507 |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 1484 |
2SC5507-T2 |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 1485 |
2SC5706 |
NPN Epitaxial Planar Silicon Transistors High Current Switching Applications |
SANYO |
| 1486 |
2SC5707 |
High Current Switching Applications |
SANYO |
| 1487 |
2SC838 |
Transistor. FM radio RF amp, mix. conv, osc, IF amp . Collector-base voltage Vcbo = 35V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 30mA. |
USHA India LTD |
| 1488 |
2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = |
USHA India LTD |
| 1489 |
2SC945 |
Transistor. Audio frequency amplifier high frequency osc. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 50V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 150mA. |
USHA India LTD |
| 1490 |
2SD1049 |
TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT HIGH SPEED SWITCHING |
Fuji Electric |
| 1491 |
2SD1087 |
Silicon NPN triple diffused darlington power high current switching transistor |
TOSHIBA |
| 1492 |
2SD1162 |
NPN silicon triple diffused darlington transistor, high current, high current switching |
NEC |
| 1493 |
2SD1162 |
NPN silicon triple diffused darlington transistor, high current, high current switching |
NEC |
| 1494 |
2SD1247 |
High Current Switching Transistor |
ON Semiconductor |
| 1495 |
2SD1348 |
High Current Switching Transistor |
ON Semiconductor |
| 1496 |
2SD1362 |
Silicon NPN triple diffused high current switching transistor |
TOSHIBA |
| 1497 |
2SD1363 |
Silicon NPN triple diffused high current power switching transistor |
TOSHIBA |
| 1498 |
2SD1411 |
Silicon NPN triple diffused high current switching power transistor |
TOSHIBA |
| 1499 |
2SD1411A |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1500 |
2SD1412 |
Silicon NPN triple diffused high current power switching transistor |
TOSHIBA |
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