| No. |
Part Name |
Description |
Manufacturer |
| 1411 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
| 1412 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
| 1413 |
2N718 |
NPN silicon annular Star transistor for medium current switching and amplifier applications |
Motorola |
| 1414 |
2N918 |
hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W |
SGS Thomson Microelectronics |
| 1415 |
2N918 |
hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W |
SGS Thomson Microelectronics |
| 1416 |
2SA1012 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
| 1417 |
2SA1020 |
One Watt High Current PNP Transistor |
ON Semiconductor |
| 1418 |
2SA1244 |
Transistor Silicon PNP Epitaxial Type (PCT process) High Current Switching Applications |
TOSHIBA |
| 1419 |
2SA1279 |
Silicon PNP epitaxial high current switching transistor |
TOSHIBA |
| 1420 |
2SA1293 |
TRANSISTOR SILICON PNP PITAXIAL TYPE (PCT PROCESS) High Current Switching Applications |
TOSHIBA |
| 1421 |
2SA1307 |
Silicon PNP epitaxial high current switching transistor |
TOSHIBA |
| 1422 |
2SA1308 |
Silicon PNP epitaxial high current switching transistor |
TOSHIBA |
| 1423 |
2SA1349 |
TRANSISTOR (LOW NOISE AUDIO AMPLIFIER APPLICATIONS. RECOMMENDED FOR CASCADE/ CURRENT MIRROR CIRCUIT APPLICATIONS OF THE FIRST STAGES OF PRE/ MAIN AMPL |
TOSHIBA |
| 1424 |
2SA1365 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1425 |
2SA1451 |
TRANSISTOR (HIGH SPEED/ HIGH CURRENT SWITCHING APPLICATIONS) |
TOSHIBA |
| 1426 |
2SA1451A |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH SPEED, High Current Switching Applications |
TOSHIBA |
| 1427 |
2SA1452 |
TRANSISTOR (HIGH SPEED/ HIGH CURRENT SWITCHING APPLICATIONS) |
TOSHIBA |
| 1428 |
2SA1452A |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH SPEED, High Current Switching Applications |
TOSHIBA |
| 1429 |
2SA1734 |
High Current PNP Transistor |
ON Semiconductor |
| 1430 |
2SA1771 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE HIGH CURRENT SWITCHING APPLICATIONS |
TOSHIBA |
| 1431 |
2SA1855 |
High Current PNP Switching Transistor |
ON Semiconductor |
| 1432 |
2SA1887 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS |
TOSHIBA |
| 1433 |
2SA1905 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS |
TOSHIBA |
| 1434 |
2SA1933 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS |
TOSHIBA |
| 1435 |
2SA1934 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS |
TOSHIBA |
| 1436 |
2SA1945 |
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1437 |
2SA1945 |
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1438 |
2SA2039 |
PNP Epitaxial Planar Silicon Transistors High Current Switching Applications |
SANYO |
| 1439 |
2SA2040 |
PNP Epitaxial Planar Silicon Transistors High Current Switching Applications |
SANYO |
| 1440 |
2SA78 |
Germanium PNP high current switching transistor |
Felvezeto Katalogus 1966 |
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