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Datasheets for IRF3

Datasheets found :: 390
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No. Part Name Description Manufacturer
151 IRF351 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 15A. General Electric Solid State
152 IRF351 13.0A and 15.0A, 350 and 400V, 0.300 and 0.400 ohm, Avalanche Rated*, N-Channel Power MOSFET FN1826.2 Intersil
153 IRF351 Trans MOSFET N-CH 350V 13A 3-Pin(2+Tab) TO-204AA New Jersey Semiconductor
154 IRF351 N-CHANNEL POWER MOSFETS Samsung Electronic
155 IRF351 MOSPOWER N-Channel Enhancement Mode Transistor 350V 15A Siliconix
156 IRF3515L 150V Single N-Channel HEXFET Power MOSFET in a TO-262 package International Rectifier
157 IRF3515LPBF 150V Single N-Channel HEXFET Power MOSFET in a TO-262 package International Rectifier
158 IRF3515S 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
159 IRF3515SPBF 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
160 IRF3515STRL 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
161 IRF3515STRLPBF 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
162 IRF3515STRR 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
163 IRF352 N-Channel Power MOSFETs/ 15A/ 350V/400V Fairchild Semiconductor
164 IRF352 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 13A. General Electric Solid State
165 IRF352 13.0A and 15.0A, 350 and 400V, 0.300 and 0.400 ohm, Avalanche Rated*, N-Channel Power MOSFET FN1826.2 Intersil
166 IRF352 Trans MOSFET 400V 13A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
167 IRF352 N-CHANNEL POWER MOSFETS Samsung Electronic
168 IRF352 MOSPOWER N-Channel Enhancement Mode Transistor 400V 13A Siliconix
169 IRF3521 Trans MOSFET 400V 13A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
170 IRF352R Trans MOSFET 400V 13A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
171 IRF353 N-Channel Power MOSFETs/ 15A/ 350V/400V Fairchild Semiconductor
172 IRF353 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 13A. General Electric Solid State
173 IRF353 13.0A and 15.0A, 350 and 400V, 0.300 and 0.400 ohm, Avalanche Rated*, N-Channel Power MOSFET FN1826.2 Intersil
174 IRF353 Trans MOSFET N-CH 350V 12A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
175 IRF353 N-CHANNEL POWER MOSFETS Samsung Electronic
176 IRF353 MOSPOWER N-Channel Enhancement Mode Transistor 350V 13A Siliconix
177 IRF3546M 60A Dual Integrated Power Block. Two Pairs of High Performance Control and Synchronous MOSFETs. 25V Quad N-Channel HEXFET Power MOSFET International Rectifier
178 IRF3546MTRPBF 60A Dual Integrated Power Block. Two Pairs of High Performance Control and Synchronous MOSFETs. 25V Quad N-Channel HEXFET Power MOSFET International Rectifier
179 IRF36 Inductors Vishay
180 IRF360 400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package International Rectifier


Datasheets found :: 390
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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