No. |
Part Name |
Description |
Manufacturer |
91 |
IRF3315PBF |
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
92 |
IRF3315S |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
93 |
IRF3315STRL |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
94 |
IRF3315STRR |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
95 |
IRF3315STRRPBF |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
96 |
IRF331R |
Trans MOSFET N-CH 150V 23A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
97 |
IRF332 |
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
98 |
IRF332 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
99 |
IRF332 |
4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs |
Intersil |
100 |
IRF332 |
Trans MOSFET N-CH 400V 4.5A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
101 |
IRF332 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
102 |
IRF332 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 4.5A |
Siliconix |
103 |
IRF333 |
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
104 |
IRF333 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
105 |
IRF333 |
4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs |
Intersil |
106 |
IRF333 |
Trans MOSFET N-CH 350V 4.5A 3-Pin (2+Tab) TO-3 |
New Jersey Semiconductor |
107 |
IRF333 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
108 |
IRF333 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 4.5A |
Siliconix |
109 |
IRF340 |
N-Channel Power MOSFETs/ 10A/ 350V/400V |
Fairchild Semiconductor |
110 |
IRF340 |
400V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
111 |
IRF340 |
10A and 8.3A, 400V and 350V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs |
Intersil |
112 |
IRF340 |
Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) TO-204AA |
New Jersey Semiconductor |
113 |
IRF340 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
114 |
IRF340 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 10A |
Siliconix |
115 |
IRF340-343 |
N-Channel Power MOSFETs/ 10A/ 350V/400V |
Fairchild Semiconductor |
116 |
IRF341 |
N-Channel Power MOSFETs/ 10A/ 350V/400V |
Fairchild Semiconductor |
117 |
IRF341 |
Trans MOSFET N-CH 350V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
118 |
IRF341 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
119 |
IRF341 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 10A |
Siliconix |
120 |
IRF3415 |
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
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