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Datasheets for IRF3

Datasheets found :: 390
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No. Part Name Description Manufacturer
61 IRF322 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
62 IRF322 2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs Intersil
63 IRF322 Trans MOSFET N-CH 400V 2.8A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
64 IRF322 N-CHANNEL POWER MOSFETS Samsung Electronic
65 IRF323 N-Channel Power MOSFETs/ 3.0 A/ 350-400 V Fairchild Semiconductor
66 IRF323 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
67 IRF323 2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs Intersil
68 IRF323 Trans MOSFET N-CH 350V 2.8A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
69 IRF323 N-CHANNEL POWER MOSFETS Samsung Electronic
70 IRF330 N-Channel Power MOSFETs/ 5.5A/ 350 V/400V Fairchild Semiconductor
71 IRF330 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
72 IRF330 400V Single N-Channel Hi-Rel MOSFET in a TO-204AA package International Rectifier
73 IRF330 5.5A/ 400V/ 1.000 Ohm/ N-Channel Power MOSFET Intersil
74 IRF330 Trans MOSFET N-CH 400V 5.5A 3-Pin(2+Tab) TO-204AA New Jersey Semiconductor
75 IRF330 N-CHANNEL POWER MOSFETS Samsung Electronic
76 IRF330 MOSPOWER N-Channel Enhancement Mode Transistor 400V 5.5A Siliconix
77 IRF330-333 N-Channel Power MOSFETs/ 5.5A/ 350 V/400V Fairchild Semiconductor
78 IRF3305 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package International Rectifier
79 IRF3305PBF 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package International Rectifier
80 IRF330R Trans MOSFET N-CH 55V 140A 3-Pin(3+Tab) TO-220AB New Jersey Semiconductor
81 IRF331 N-Channel Power MOSFETs/ 5.5A/ 350 V/400V Fairchild Semiconductor
82 IRF331 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
83 IRF331 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs Intersil
84 IRF331 Trans MOSFET N-CH 350V 5.5A 3-Pin (2+Tab) TO-3 New Jersey Semiconductor
85 IRF331 N-CHANNEL POWER MOSFETS Samsung Electronic
86 IRF331 MOSPOWER N-Channel Enhancement Mode Transistor 350V 5.5A Siliconix
87 IRF3315 150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package International Rectifier
88 IRF3315L 150V Single N-Channel HEXFET Power MOSFET in a TO-262 package International Rectifier
89 IRF3315L Trans MOSFET N-CH 150V 21A 3-Pin(3+Tab) TO-262 New Jersey Semiconductor
90 IRF3315LPBF 150V Single N-Channel HEXFET Power MOSFET in a TO-262 package International Rectifier


Datasheets found :: 390
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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