DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for IRF3

Datasheets found :: 378
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |
No. Part Name Description Manufacturer
61 IRF322 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
62 IRF322 2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs Intersil
63 IRF322 Trans MOSFET N-CH 400V 2.8A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
64 IRF322 N-CHANNEL POWER MOSFETS Samsung Electronic
65 IRF323 N-Channel Power MOSFETs/ 3.0 A/ 350-400 V Fairchild Semiconductor
66 IRF323 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
67 IRF323 2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs Intersil
68 IRF323 Trans MOSFET N-CH 350V 2.8A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
69 IRF323 N-CHANNEL POWER MOSFETS Samsung Electronic
70 IRF330 N-Channel Power MOSFETs/ 5.5A/ 350 V/400V Fairchild Semiconductor
71 IRF330 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
72 IRF330 400V Single N-Channel Hi-Rel MOSFET in a TO-204AA package International Rectifier
73 IRF330 5.5A/ 400V/ 1.000 Ohm/ N-Channel Power MOSFET Intersil
74 IRF330 Trans MOSFET N-CH 400V 5.5A 3-Pin(2+Tab) TO-204AA New Jersey Semiconductor
75 IRF330 N-CHANNEL POWER MOSFETS Samsung Electronic
76 IRF330-333 N-Channel Power MOSFETs/ 5.5A/ 350 V/400V Fairchild Semiconductor
77 IRF3305 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package International Rectifier
78 IRF3305PBF 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package International Rectifier
79 IRF330R Trans MOSFET N-CH 55V 140A 3-Pin(3+Tab) TO-220AB New Jersey Semiconductor
80 IRF331 N-Channel Power MOSFETs/ 5.5A/ 350 V/400V Fairchild Semiconductor
81 IRF331 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
82 IRF331 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs Intersil
83 IRF331 Trans MOSFET N-CH 350V 5.5A 3-Pin (2+Tab) TO-3 New Jersey Semiconductor
84 IRF331 N-CHANNEL POWER MOSFETS Samsung Electronic
85 IRF3315 150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package International Rectifier
86 IRF3315L 150V Single N-Channel HEXFET Power MOSFET in a TO-262 package International Rectifier
87 IRF3315L Trans MOSFET N-CH 150V 21A 3-Pin(3+Tab) TO-262 New Jersey Semiconductor
88 IRF3315LPBF 150V Single N-Channel HEXFET Power MOSFET in a TO-262 package International Rectifier
89 IRF3315PBF 150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package International Rectifier
90 IRF3315S 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier


Datasheets found :: 378
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



© 2024 - www Datasheet Catalog com