No. |
Part Name |
Description |
Manufacturer |
31 |
IRF3007STRLPBF |
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
32 |
IRF320 |
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V |
Fairchild Semiconductor |
33 |
IRF320 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A. |
General Electric Solid State |
34 |
IRF320 |
2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs |
Intersil |
35 |
IRF320 |
Trans MOSFET N-CH 400V 3.3A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
36 |
IRF320 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
37 |
IRF320-323 |
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V |
Fairchild Semiconductor |
38 |
IRF3205 |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
39 |
IRF3205L |
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
40 |
IRF3205LPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
41 |
IRF3205PBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
42 |
IRF3205S |
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
43 |
IRF3205SPBF |
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
44 |
IRF3205STRL |
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
45 |
IRF3205STRLPBF |
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
46 |
IRF3205STRR |
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
47 |
IRF3205VPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
48 |
IRF3205Z |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package |
International Rectifier |
49 |
IRF3205ZL |
55V Single N-Channel HEXFET Power MOSFET in a TO-262 Package |
International Rectifier |
50 |
IRF3205ZLPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-262 Package |
International Rectifier |
51 |
IRF3205ZPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package |
International Rectifier |
52 |
IRF3205ZS |
55V Single N-Channel HEXFET Power MOSFET in a D2Pak Package |
International Rectifier |
53 |
IRF3205ZSPBF |
55V Single N-Channel HEXFET Power MOSFET in a D2Pak Package |
International Rectifier |
54 |
IRF3205ZSTRLPBF |
55V Single N-Channel HEXFET Power MOSFET in a D2Pak Package |
International Rectifier |
55 |
IRF321 |
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V |
Fairchild Semiconductor |
56 |
IRF321 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A. |
General Electric Solid State |
57 |
IRF321 |
2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs |
Intersil |
58 |
IRF321 |
Trans MOSFET N-CH 350V 3.3A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
59 |
IRF321 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
60 |
IRF322 |
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V |
Fairchild Semiconductor |
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