No. |
Part Name |
Description |
Manufacturer |
1651 |
2N2222 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
1652 |
2N2222 |
NPN Silicon annular star transistor for high-speed switching and DC to UHF amplifier applications, 2N2907 PNP complementary |
Motorola |
1653 |
2N2222A |
Silicon transistor for switching applications |
IPRS Baneasa |
1654 |
2N2222A |
NPN silicon annular Star transistor for high-speed and switching and DC to VHF amplifier applications |
Motorola |
1655 |
2N2222ACSM |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
1656 |
2N2222ACSM4 |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
1657 |
2N2222ADCSM |
DUAL HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
1658 |
2N2222AXCSM |
Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications |
SemeLAB |
1659 |
2N2223 |
NPN silicon annular Star dual transistor matched pair for differential amplifiers and other applications |
Motorola |
1660 |
2N2223A |
NPN silicon annular Star dual transistor matched pair for differential amplifiers and other applications |
Motorola |
1661 |
2N2224 |
NPN silicon annular transistor designed primarly for high speed switching applications |
Motorola |
1662 |
2N2242 |
NPN silicon annular transistor designed for high-speed, low-power saturated switching applications |
Motorola |
1663 |
2N2273 |
High-frequency germanium PNP transistor, designed for mlitary and high-reliability industrial as well as comercial VHF amplifier applications |
Motorola |
1664 |
2N2297 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
1665 |
2N2297 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
1666 |
2N2330 |
NPN silicon annular Star transistor for low-level DC/AC chopper applications |
Motorola |
1667 |
2N2331 |
NPN silicon annular Star transistor for low-level DC/AC chopper applications |
Motorola |
1668 |
2N2360 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
1669 |
2N2361 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
1670 |
2N2362 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
1671 |
2N2368 |
Silicon transistor for switching applications |
IPRS Baneasa |
1672 |
2N2369 |
Silicon transistor for switching applications |
IPRS Baneasa |
1673 |
2N2369 |
NPN silicon annular transistor for low-current, high-speed switching applications |
Motorola |
1674 |
2N2369A |
Silicon transistor for switching applications |
IPRS Baneasa |
1675 |
2N2369A |
NPN silicon epitaxial transistor for high-speed range of 10-100 mAdc switching applications |
Motorola |
1676 |
2N2369A1 |
HIGH SPEED / MEDIUM POWER / NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
1677 |
2N2369ACSM |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
1678 |
2N2398 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
1679 |
2N2399 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
1680 |
2N2405 |
NPN silicon annular transistor designed for medium-power applications |
Motorola |
| | | |