| No. |
Part Name |
Description |
Manufacturer |
| 1681 |
2N2453 |
Dual NPN silicon transistor designed for differential amplifier applications |
Motorola |
| 1682 |
2N2453A |
Dual NPN silicon transistor designed for differential amplifier applications |
Motorola |
| 1683 |
2N2480 |
NPN silicon annular Star dual transistor matched pair for differential amplifiers and other applications |
Motorola |
| 1684 |
2N2480A |
NPN silicon annular Star dual transistor matched pair for differential amplifiers and other applications |
Motorola |
| 1685 |
2N2483 |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
| 1686 |
2N2484 |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
| 1687 |
2N2484CSM |
HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1688 |
2N2573 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 1689 |
2N2574 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 1690 |
2N2575 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 1691 |
2N2576 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 1692 |
2N2577 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 1693 |
2N2578 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 1694 |
2N2579 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 1695 |
2N2635 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 1696 |
2N2720 |
Dual NPN silicon transistors for differential amplifier applications |
Motorola |
| 1697 |
2N2721 |
Dual NPN silicon transistors for differential amplifier applications |
Motorola |
| 1698 |
2N2722 |
Dual NPN silicon transistor for differential amplifier applications |
Motorola |
| 1699 |
2N2800 |
PNP silicon annular transistor for medium-speed switching applications TO-5 case |
Motorola |
| 1700 |
2N2801 |
PNP silicon annular transistor for medium-speed switching applications TO-5 case |
Motorola |
| 1701 |
2N2802 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
| 1702 |
2N2803 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
| 1703 |
2N2804 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
| 1704 |
2N2805 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
| 1705 |
2N2806 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
| 1706 |
2N2807 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
| 1707 |
2N2815 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
| 1708 |
2N2816 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
| 1709 |
2N2817 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
| 1710 |
2N2818 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
| | | |
