| No. |
Part Name |
Description |
Manufacturer |
| 1771 |
2N2957 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 1772 |
2N297A |
PNP germanium power transistor for military and industrial power switching and amplifier applications |
Motorola |
| 1773 |
2N3011 |
NPN silicon low-power transistor designed for switching applications |
Motorola |
| 1774 |
2N3019CSM |
HIGH FREQUENCY, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1775 |
2N3043 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 1776 |
2N3044 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 1777 |
2N3045 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 1778 |
2N3046 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 1779 |
2N3047 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 1780 |
2N3048 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 1781 |
2N3049 |
Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 1782 |
2N3050 |
Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 1783 |
2N3053 |
NPN silicon annular transistor designed for medium-current applications |
Motorola |
| 1784 |
2N3053 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
| 1785 |
2N3054 |
NPN Silicon Power Transistor for audio amplifiers and switching applications |
Newmarket Transistors NKT |
| 1786 |
2N3055 |
Silicon diffused mesa NPN power transistor for high power switching applications and AF amplifiers |
AEG-TELEFUNKEN |
| 1787 |
2N3055 |
Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications |
ITT Semiconductors |
| 1788 |
2N3055 |
NPN Silicon Power Transistor for audio amplifiers and switching applications |
Newmarket Transistors NKT |
| 1789 |
2N3055 |
High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. |
USHA India LTD |
| 1790 |
2N3055H |
NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. |
USHA India LTD |
| 1791 |
2N3114 |
NPN silicon transistor designed for high-voltage, low power video amplifier applications |
Motorola |
| 1792 |
2N3114CSM |
Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications |
SemeLAB |
| 1793 |
2N3137 |
NPN silicon transistor for large signal VHF and UHF applications |
Motorola |
| 1794 |
2N3137 |
Epitaxial planar NPN transistor, designed for application as a Class-C, RF power amplifier |
SGS-ATES |
| 1795 |
2N319 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 1796 |
2N320 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 1797 |
2N3209CSM |
HIGH SPEED, PNP, SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1798 |
2N321 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 1799 |
2N3227 |
NPN silicon annular transistor for low-current, high-speed switching applications |
Motorola |
| 1800 |
2N3252 |
NPN silicon transistor for high-current saturated switching and core driver applications |
Motorola |
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