| No. |
Part Name |
Description |
Manufacturer |
| 1801 |
2N3253 |
NPN silicon transistor for high-current saturated switching and core driver applications |
Motorola |
| 1802 |
2N3283 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 1803 |
2N3284 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 1804 |
2N3285 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 1805 |
2N3286 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 1806 |
2N3295 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
| 1807 |
2N3296 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
| 1808 |
2N3297 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
| 1809 |
2N3298 |
NPN silicon transistor for power oscillator applications to 150 MHz |
Motorola |
| 1810 |
2N3303 |
NPN silicon annular transistor designet for high-speed, high-current switching and driving applications |
Motorola |
| 1811 |
2N3323 |
PNP germanium transistor for FM RF, IF, mixer and oscillator and AM RF, IF and converter applications |
Motorola |
| 1812 |
2N3324 |
PNP germanium transistor for FM RF, IF, mixer and oscillator and AM RF, IF and converter applications |
Motorola |
| 1813 |
2N3325 |
PNP germanium transistor for FM RF, IF, mixer and oscillator and AM RF, IF and converter applications |
Motorola |
| 1814 |
2N3375 |
Silicon NPN overlay epitaxial planar transistor for VHF/UHF transmitting applications |
ICCE |
| 1815 |
2N3375 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 1816 |
2N3375 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 28 V supply voltage |
VALVO |
| 1817 |
2N3409 |
NPN silicon annular Star dual transistors for differential amplifiers applications |
Motorola |
| 1818 |
2N3410 |
NPN silicon annular Star dual transistors for differential amplifiers applications |
Motorola |
| 1819 |
2N3411 |
NPN silicon annular Star dual transistors for differential amplifiers applications |
Motorola |
| 1820 |
2N3418 |
Planar transistor for switching applications |
SGS-ATES |
| 1821 |
2N3419 |
Planar transistor for switching applications |
SGS-ATES |
| 1822 |
2N3420 |
Planar transistor for switching applications |
SGS-ATES |
| 1823 |
2N3421 |
Planar transistor for switching applications |
SGS-ATES |
| 1824 |
2N3439CSM4 |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1825 |
2N3439CSM4R |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1826 |
2N3440CSM4R |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1827 |
2N3440S |
Silicon planar epitaxial NPN transistor intended for high voltage switching and linear amplifier applications |
SGS-ATES |
| 1828 |
2N3440S |
Planar transistor for switching applications |
SGS-ATES |
| 1829 |
2N3444 |
NPN silicon transistor for high-current saturated switching and core driver applications |
Motorola |
| 1830 |
2N3485 |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
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