| No. |
Part Name |
Description |
Manufacturer |
| 1711 |
2N2819 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
| 1712 |
2N2820 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
| 1713 |
2N2821 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
| 1714 |
2N2822 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
| 1715 |
2N2823 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
| 1716 |
2N2824 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
| 1717 |
2N2825 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
| 1718 |
2N2837 |
PNP silicon annular transistor for medium-speed switching applications TO-18 case |
Motorola |
| 1719 |
2N2838 |
PNP silicon annular transistor for medium-speed switching applications TO-18 case |
Motorola |
| 1720 |
2N2845 |
NPN silicon annular transistor designed for switching applications |
Motorola |
| 1721 |
2N2846 |
NPN silicon annular transistor designed for switching applications |
Motorola |
| 1722 |
2N2847 |
NPN silicon annular transistor designed for switching applications |
Motorola |
| 1723 |
2N2848 |
NPN silicon annular transistor designed for switching applications |
Motorola |
| 1724 |
2N2857 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz |
SGS-ATES |
| 1725 |
2N2857CSM |
HIGH FREQUENCY NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1726 |
2N2894 |
PNP silicon annular transistor designed for switching applications |
Motorola |
| 1727 |
2N2894ACSM |
HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1728 |
2N2894CSM |
HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1729 |
2N2903 |
Dual NPN silicon transistors designed for differential amplifier applications |
Motorola |
| 1730 |
2N2903A |
Dual NPN silicon transistors designed for differential amplifier applications |
Motorola |
| 1731 |
2N2904 |
Silicon PNP epitaxial planar transistor for high speed switching applications and amplifier circuits |
AEG-TELEFUNKEN |
| 1732 |
2N2904 |
Silicon transistor for switching applications PNP |
IPRS Baneasa |
| 1733 |
2N2904 |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 1734 |
2N2904 |
PNP Silicon annular star transistor for high-speed switching and DC to UHF amplifier applications, 2N2218 NPN complementary |
Motorola |
| 1735 |
2N2904A |
Silicon PNP epitaxial planar transistor for high speed switching applications and amplifier circuits |
AEG-TELEFUNKEN |
| 1736 |
2N2904A |
Silicon transistor for switching applications PNP |
IPRS Baneasa |
| 1737 |
2N2904A |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 1738 |
2N2905 |
Silicon PNP epitaxial planar transistor for high speed switching applications and amplifier circuits |
AEG-TELEFUNKEN |
| 1739 |
2N2905 |
Silicon transistor for switching applications PNP |
IPRS Baneasa |
| 1740 |
2N2905 |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
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