| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N2229 |
Trans GP BJT NPN 40V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 182 |
2N2230 |
Trans GP BJT NPN 40V 0.8A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 183 |
2N2231 |
Trans GP BJT NPN 40V 0.8A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 184 |
2N2232 |
Trans GP BJT NPN 40V 0.8A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 185 |
2N2233 |
Trans GP BJT NPN 40V 0.8A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 186 |
2N2237 |
Trans GP BJT NPN 40V 0.8A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 187 |
2N2297 |
Trans GP BJT NPN 40V 0.8A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 188 |
2N23867 |
1.000W Power PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE. |
Continental Device India Limited |
| 189 |
2N2904 |
0.600W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.600A Ic, 20 hFE. |
Continental Device India Limited |
| 190 |
2N2904 |
Trans GP BJT PNP 40V 0.6A 3-Pin TO-39 |
New Jersey Semiconductor |
| 191 |
2N2905 |
0.600W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.600A Ic, 30 hFE. |
Continental Device India Limited |
| 192 |
2N2905 |
Trans GP BJT PNP 40V 0.6A 3-Pin TO-39 |
New Jersey Semiconductor |
| 193 |
2N2906 |
0.400W Switching PNP Metal Can Transistor. 40V Vceo, 0.600A Ic, 20 hFE. |
Continental Device India Limited |
| 194 |
2N2906 |
Trans GP BJT PNP 40V 0.6A 3-Pin TO-18 |
New Jersey Semiconductor |
| 195 |
2N2907 |
0.400W Switching PNP Metal Can Transistor. 40V Vceo, 0.600A Ic, 30 hFE. |
Continental Device India Limited |
| 196 |
2N2907 |
Trans GP BJT PNP 40V 0.6A 3-Pin TO-18 |
New Jersey Semiconductor |
| 197 |
2N3053 |
5.000W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.700A Ic, 50 - 250 hFE. |
Continental Device India Limited |
| 198 |
2N3053 |
Trans GP BJT NPN 40V 0.7A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 199 |
2N3109 |
Trans GP BJT NPN 40V 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 200 |
2N3110 |
Trans GP BJT NPN 40V 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 201 |
2N3244 |
V(ceo): 40V; V(cbo): 40V; V(ebo): 5V; 1A; PNP silicon general purpose transistor |
Motorola |
| 202 |
2N3244 |
V(ceo): 40V; V(cbo): 40V; V(ebo): 5V; 1A; PNP silicon general purpose transistor |
Motorola |
| 203 |
2N3244 |
Trans GP BJT PNP 40V 1A |
New Jersey Semiconductor |
| 204 |
2N3250 |
0.360W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.200A Ic, 40 hFE. |
Continental Device India Limited |
| 205 |
2N3250 |
Trans GP BJT PNP 40V 0.2A 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 206 |
2N3251 |
0.360W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.200A Ic, 80 hFE. |
Continental Device India Limited |
| 207 |
2N3251 |
Trans GP BJT PNP 40V 0.2A 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 208 |
2N335/1299 |
Trans GP BJT PNP 40V 0.2A 6-Pin LCC-2 |
New Jersey Semiconductor |
| 209 |
2N3375 |
Trans GP BJT NPN 40V 1.5A 3-Pin TO-60 |
New Jersey Semiconductor |
| 210 |
2N3467 |
Trans GP BJT PNP 40V 1A 3-Pin TO-39 |
New Jersey Semiconductor |
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