| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2N3905 |
0.625W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 30 - hFE |
Continental Device India Limited |
| 242 |
2N3906 |
0.625W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 60 - hFE |
Continental Device India Limited |
| 243 |
2N3906 |
Trans GP BJT PNP 40V 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 244 |
2N3932 |
Trans GP BJT PNP 40V 0.2A 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 245 |
2N3933 |
Trans GP BJT PNP 40V 0.2A 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 246 |
2N3946 |
Trans GP BJT NPN 40V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 247 |
2N3947 |
Trans GP BJT NPN 40V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 248 |
2N4034 |
Trans GP BJT NPN 40V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 249 |
2N4035 |
Trans GP BJT NPN 40V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 250 |
2N4037 |
1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 1.000A Ic, 50 - 250 hFE. |
Continental Device India Limited |
| 251 |
2N4037 |
Trans GP BJT PNP 40V 1A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 252 |
2N4091 |
Trans JFET N-CH 40V 30mA 3-Pin TO-18 |
New Jersey Semiconductor |
| 253 |
2N4091A |
Trans JFET N-CH 40V 30mA 3-Pin TO-18 |
New Jersey Semiconductor |
| 254 |
2N4092 |
Trans JFET N-CH 40V 15mA 3-Pin TO-18 |
New Jersey Semiconductor |
| 255 |
2N4092A |
Trans JFET N-CH 40V 15mA 3-Pin TO-18 |
New Jersey Semiconductor |
| 256 |
2N4093 |
Trans JFET N-CH 40V 8mA 3-Pin TO-18 |
New Jersey Semiconductor |
| 257 |
2N4093A |
Trans JFET N-CH 40V 8mA 3-Pin TO-18 |
New Jersey Semiconductor |
| 258 |
2N4123 |
General purpose transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 259 |
2N4231 |
Trans GP BJT NPN 40V 5A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
| 260 |
2N4231A |
Trans GP BJT NPN 40V 10A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
| 261 |
2N4234 |
6.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 262 |
2N4234 |
Trans GP BJT NPN 40V 1A 3-Pin TO-39 |
New Jersey Semiconductor |
| 263 |
2N4237 |
1.000W General Purpose NPN Metal Can Transistor. 40V Vceo, 1.000A Ic, 15 hFE. |
Continental Device India Limited |
| 264 |
2N4237 |
Trans GP BJT NPN 40V 1A 3-Pin TO-39 |
New Jersey Semiconductor |
| 265 |
2N4248 |
Trans GP BJT PNP 40V |
New Jersey Semiconductor |
| 266 |
2N4250 |
Trans GP BJT PNP 40V |
New Jersey Semiconductor |
| 267 |
2N4250M |
Trans GP BJT PNP 40V |
New Jersey Semiconductor |
| 268 |
2N4398 |
Trans GP BJT PNP 40V 30A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 269 |
2N4400 |
0.625W Switching NPN Plastic Leaded Transistor. 40V Vceo, 0.600A Ic, 20 hFE. |
Continental Device India Limited |
| 270 |
2N4400 |
Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
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