| No. |
Part Name |
Description |
Manufacturer |
| 361 |
2N6470 |
Trans GP BJT NPN 40V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 362 |
2N6482 |
Trans GP BJT PNP 40V 15A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
| 363 |
2N6486 |
75.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 15.000A Ic, 20 - 150 hFE. |
Continental Device India Limited |
| 364 |
2N6486 |
Trans GP BJT NPN 40V 15A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
| 365 |
2N6489 |
75.000W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, 15.000A Ic, 20 - 150 hFE. |
Continental Device India Limited |
| 366 |
2N6489 |
Trans GP BJT PNP 40V 15A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
| 367 |
2N6549 |
Trans Darlington NPN 40V 2A 3-Pin(3+Tab) TO-202 |
New Jersey Semiconductor |
| 368 |
2N6569 |
12A Power Transistor NPN Silicon 40V 100W |
Motorola |
| 369 |
2N6594 |
12 Ampere 100W POWER PNP silicon transistor 40V |
Motorola |
| 370 |
2N6648 |
Trans Darlington PNP 40V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 371 |
2N6715 |
0.750W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 1.500A Ic, 55 - hFE |
Continental Device India Limited |
| 372 |
2N6715 |
Trans GP BJT NPN 40V 2A 3-Pin(3+Tab) TO-237 Box |
New Jersey Semiconductor |
| 373 |
2N6724 |
Trans Darlington NPN 40V 2A 3-Pin TO-237 Tape and Box |
New Jersey Semiconductor |
| 374 |
2N6724-18 |
Trans Darlington NPN 40V 2A 3-Pin TO-237 Tape and Box |
New Jersey Semiconductor |
| 375 |
2N6727 |
0.850W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 1.000A Ic, 55 - hFE |
Continental Device India Limited |
| 376 |
2N6727 |
Trans GP BJT PNP 40V 2A 3-Pin(3+Tab) TO-237 Box |
New Jersey Semiconductor |
| 377 |
2N696 |
Trans GP BJT NPN 40V 3-Pin TO-5 |
New Jersey Semiconductor |
| 378 |
2N696A |
Trans GP BJT NPN 40V 3-Pin TO-5 |
New Jersey Semiconductor |
| 379 |
2N697 |
0.600W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.500A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 380 |
2N697 |
Trans GP BJT NPN 40V 3-Pin TO-5 |
New Jersey Semiconductor |
| 381 |
2N697H |
Trans GP BJT NPN 40V 3-Pin TO-5 |
New Jersey Semiconductor |
| 382 |
2N7013 |
MOSPOWER N-Channel Enhancement Mode Transistor 40V 1.2A |
Siliconix |
| 383 |
2SA1227 |
Trans GP BJT PNP 40V 0.03A 3-Pin Mini-Mold |
New Jersey Semiconductor |
| 384 |
2SA886 |
Trans GP BJT PNP 40V 1.5A 3-Pin TO-126B-A1 |
New Jersey Semiconductor |
| 385 |
2SA968 |
Trans GP BJT PNP 40V 1.5A 3-Pin TO-126A-A1 |
New Jersey Semiconductor |
| 386 |
2SA969 |
Trans GP BJT PNP 40V 1.5A 3-Pin TO-126A-A1 |
New Jersey Semiconductor |
| 387 |
2SC6046 |
200mW SMD NPN transistor, maximum rating: 40V Vceo, 600mA Ic, 100 to 300 hFE. |
Isahaya Electronics Corporation |
| 388 |
2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A. |
USHA India LTD |
| 389 |
2SD847 |
Trans Darlington NPN 40V 15A 3-Pin(3+Tab) TO-3P |
New Jersey Semiconductor |
| 390 |
30FQ040 |
V(rrm): 40V; 30A schottky power rectifier |
International Rectifier |
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