No. |
Part Name |
Description |
Manufacturer |
331 |
2N5816 |
Trans GP BJT NPN 40V 0.75A 3-Pin TO-92 Box |
New Jersey Semiconductor |
332 |
2N5817 |
Trans GP BJT PNP 40V 0.75A 3-Pin TO-92 Box |
New Jersey Semiconductor |
333 |
2N5818 |
Trans GP BJT NPN 40V 0.75A 3-Pin TO-92 Box |
New Jersey Semiconductor |
334 |
2N5819 |
Trans GP BJT PNP 40V 0.75A 3-Pin TO-92 Box |
New Jersey Semiconductor |
335 |
2N5956 |
Trans GP BJT PNP 40V 6A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
336 |
2N6027 |
Silicon Programmable Unijunction Transistor 40V 300mW |
Motorola |
337 |
2N6027 |
Thyristor PUT 40V 5A 3-Pin TO-92 |
New Jersey Semiconductor |
338 |
2N6027 |
Silicon programmable unijunction transistor, 40V, 150mA |
Planeta |
339 |
2N6028 |
Silicon Programmable Unijunction Transistor 40V 300mW |
Motorola |
340 |
2N6028 |
Thyristor PUT 40V 5A 3-Pin TO-92 |
New Jersey Semiconductor |
341 |
2N6028 |
Silicon programmable unijunction transistor, 40V, 150mA |
Planeta |
342 |
2N6034 |
W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. |
Continental Device India Limited |
343 |
2N6034 |
Trans Darlington PNP 40V 4A 3-Pin TO-126 Box |
New Jersey Semiconductor |
344 |
2N6034 |
PNP medium power darlington transistor, 4A , 40V |
SGS Thomson Microelectronics |
345 |
2N6034B |
Trans Darlington PNP 40V 4A 3-Pin TO-126 Box |
New Jersey Semiconductor |
346 |
2N6037 |
40.000W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 750 - 15000 hFE. |
Continental Device India Limited |
347 |
2N6037 |
Trans Darlington NPN 40V 4A 3-Pin TO-126 Box |
New Jersey Semiconductor |
348 |
2N6037 |
NPN medium power darlington transistor, 4A , 40V |
SGS Thomson Microelectronics |
349 |
2N6039 |
W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. |
Continental Device India Limited |
350 |
2N6116 |
Silicon programmable unijunction transistor 40V 250mW |
Motorola |
351 |
2N6117 |
Silicon programmable unijunction transistor 40V 250mW |
Motorola |
352 |
2N6118 |
Silicon programmable unijunction transistor 40V 250mW |
Motorola |
353 |
2N6288 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
General Electric Solid State |
354 |
2N6289 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
General Electric Solid State |
355 |
2N6371 |
Trans GP BJT NPN 40V 15A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
356 |
2N6374 |
Trans GP BJT NPN 40V 6A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
357 |
2N6383 |
Trans Darlington NPN 40V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
358 |
2N6412 |
Plastic silicon annular power NPN transistor 15W 4A 40V |
Motorola |
359 |
2N6414 |
Plastic silicon annular power PNP transistor 15W 4A 40V |
Motorola |
360 |
2N6469 |
Trans GP BJT PNP 40V 15A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
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