| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N3506 |
Trans GP BJT NPN 40V 3A 3-Pin TO-39 |
New Jersey Semiconductor |
| 212 |
2N3564 |
Trans GP BJT NPN 40V 0.5A |
New Jersey Semiconductor |
| 213 |
2N3565 |
Trans GP BJT NPN 40V 0.5A |
New Jersey Semiconductor |
| 214 |
2N3567 |
Trans GP BJT NPN 40V 0.5A |
New Jersey Semiconductor |
| 215 |
2N3569 |
Trans GP BJT NPN 40V 0.5A |
New Jersey Semiconductor |
| 216 |
2N3569A |
Trans GP BJT NPN 40V 0.5A |
New Jersey Semiconductor |
| 217 |
2N3632 |
Trans GP BJT NPN 40V 3A 3-Pin TO-60 |
New Jersey Semiconductor |
| 218 |
2N3719 |
Trans GP BJT PNP 40V 3A 3-Pin TO-5 |
New Jersey Semiconductor |
| 219 |
2N3730 |
Trans GP BJT NPN 40V 1.5A 3-Pin TO-39 |
New Jersey Semiconductor |
| 220 |
2N3731 |
Trans GP BJT NPN 40V 1.5A 3-Pin TO-39 |
New Jersey Semiconductor |
| 221 |
2N3732 |
Trans GP BJT NPN 40V 1.5A 3-Pin TO-39 |
New Jersey Semiconductor |
| 222 |
2N3733 |
Trans GP BJT NPN 40V 3A 3-Pin TO-60 |
New Jersey Semiconductor |
| 223 |
2N3735 |
Trans GP BJT NPN 40V 1.5A 3-Pin TO-39 |
New Jersey Semiconductor |
| 224 |
2N3737 |
Trans GP BJT NPN 40V 1.5A 3-Pin TO-46 |
New Jersey Semiconductor |
| 225 |
2N3762 |
Trans GP BJT PNP 40V 1.5A 3-Pin TO-39 |
New Jersey Semiconductor |
| 226 |
2N3764 |
Trans GP BJT PNP 40V 1.5A 3-Pin TO-46 |
New Jersey Semiconductor |
| 227 |
2N3771 |
Trans GP BJT NPN 40V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 228 |
2N3771 |
Power 30A 40V Discrete NPN |
ON Semiconductor |
| 229 |
2N3771 |
Power 30A 40V Discrete NPN |
ON Semiconductor |
| 230 |
2N3771G |
Trans GP BJT NPN 40V 30A 3-Pin(2+Tab) TO-204 Tray |
New Jersey Semiconductor |
| 231 |
2N3838 |
Trans GP BJT NPN/PNP 40V 0.6A 6-Pin FPAK |
New Jersey Semiconductor |
| 232 |
2N3867 |
1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE. |
Continental Device India Limited |
| 233 |
2N3867 |
Trans GP BJT PNP 40V 3A 3-Pin TO-5 |
New Jersey Semiconductor |
| 234 |
2N3903 |
0.625W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 20 - hFE |
Continental Device India Limited |
| 235 |
2N3903 |
Planar epitaxial NPN silicon transistor. 40V, 200mA. |
General Electric Solid State |
| 236 |
2N3903 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 237 |
2N3904 |
0.625W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 40 - hFE |
Continental Device India Limited |
| 238 |
2N3904 |
Planar epitaxial NPN silicon transistor. 40V, 200mA. |
General Electric Solid State |
| 239 |
2N3904 |
Trans GP BJT NPN 40V 0.2A 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 240 |
2N3904 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
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