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Datasheets for 40V

Datasheets found :: 1557
Page: | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |
No. Part Name Description Manufacturer
301 2N498/CM Trans GP BJT PNP 40V 5A 3-Pin(2+Tab) TO-3 Sleeve New Jersey Semiconductor
302 2N4988 Trans GP BJT PNP 40V 5A 3-Pin(2+Tab) TO-3 Sleeve New Jersey Semiconductor
303 2N498A Trans GP BJT PNP 40V 5A 3-Pin(2+Tab) TO-3 Sleeve New Jersey Semiconductor
304 2N498MP Trans GP BJT PNP 40V 5A 3-Pin(2+Tab) TO-3 Sleeve New Jersey Semiconductor
305 2N499 Trans GP BJT PNP 40V 5A 3-Pin(2+Tab) TO-3 Sleeve New Jersey Semiconductor
306 2N5067 Trans GP BJT NPN 40V 5A 3-Pin(2+Tab) TO-3 Sleeve New Jersey Semiconductor
307 2N5190 Trans GP BJT NPN 40V 4A 3-Pin TO-126 New Jersey Semiconductor
308 2N5292 Trans GP BJT NPN 40V 4A 3-Pin(3+Tab) TO-220 Box New Jersey Semiconductor
309 2N5293 Trans GP BJT NPN 40V 4A 3-Pin(3+Tab) TO-220 Box New Jersey Semiconductor
310 2N5295 Trans GP BJT NPN 40V 4A 3-Pin(3+Tab) TO-220 Box New Jersey Semiconductor
311 2N5296 36.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 30 - 120 hFE. Continental Device India Limited
312 2N5296 Trans GP BJT NPN 40V 4A 3-Pin(3+Tab) TO-220 Box New Jersey Semiconductor
313 2N5296 Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. USHA India LTD
314 2N5297 Trans GP BJT NPN 40V 4A 3-Pin(3+Tab) TO-220 Box New Jersey Semiconductor
315 2N5301 High current, high power, high speed N-P-N power transistor. 40V, 200W. General Electric Solid State
316 2N5301 Trans GP BJT NPN 40V 30A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
317 2N5304 Radiation-Resistant NPN Silicon Power Transistor 10A 40V 25W Motorola
318 2N5307 Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. General Electric Solid State
319 2N5308 Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. General Electric Solid State
320 2N5308A Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. General Electric Solid State
321 2N5365 Trans GP BJT PNP 40V 0.3A 3-Pin TO-92 T/R New Jersey Semiconductor
322 2N5366 Planar epitaxial passivated PNP silicon transistor. 40V, 300mA. General Electric Solid State
323 2N5366 Trans GP BJT PNP 40V 0.3A 3-Pin TO-92 T/R New Jersey Semiconductor
324 2N5367 Trans GP BJT PNP 40V 0.3A 3-Pin TO-92 T/R New Jersey Semiconductor
325 2N5490 Trans GP BJT NPN 40V 7A 3-Pin(3+Tab) TO-220 New Jersey Semiconductor
326 2N5494 Trans GP BJT NPN 40V 7A 3-Pin(3+Tab) TO-220 New Jersey Semiconductor
327 2N5783 Trans GP BJT PNP 40V 3.5A 3-Pin TO-39 Box New Jersey Semiconductor
328 2N5786 Trans GP BJT NPN 40V 3.5A 3-Pin TO-39 Box New Jersey Semiconductor
329 2N5814 Trans GP BJT NPN 40V 0.75A 3-Pin TO-92 Box New Jersey Semiconductor
330 2N5815 Trans GP BJT PNP 40V 0.75A 3-Pin TO-92 Box New Jersey Semiconductor


Datasheets found :: 1557
Page: | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |



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