No. |
Part Name |
Description |
Manufacturer |
181 |
2N2453A |
Dual NPN silicon transistor designed for differential amplifier applications |
Motorola |
182 |
2N2639 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
183 |
2N2640 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
184 |
2N2641 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
185 |
2N2642 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
186 |
2N2643 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
187 |
2N2644 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
188 |
2N2646 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
189 |
2N2647 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
190 |
2N2728 |
PNP germanium high-current power transistor especially designed for solar cells, thermo-electric generators, sea cells, fuel cells, and 1.5-volt batteries |
Motorola |
191 |
2N2802 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
192 |
2N2803 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
193 |
2N2804 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
194 |
2N2805 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
195 |
2N2806 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
196 |
2N2807 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
197 |
2N2845 |
NPN silicon annular transistor designed for switching applications |
Motorola |
198 |
2N2846 |
NPN silicon annular transistor designed for switching applications |
Motorola |
199 |
2N2847 |
NPN silicon annular transistor designed for switching applications |
Motorola |
200 |
2N2848 |
NPN silicon annular transistor designed for switching applications |
Motorola |
201 |
2N2857 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
202 |
2N2894 |
PNP silicon annular transistor designed for switching applications |
Motorola |
203 |
2N2903 |
Dual NPN silicon transistors designed for differential amplifier applications |
Motorola |
204 |
2N2903A |
Dual NPN silicon transistors designed for differential amplifier applications |
Motorola |
205 |
2N2913 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
206 |
2N2914 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
207 |
2N2915 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
208 |
2N2916 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
209 |
2N2917 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
210 |
2N2918 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
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