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Datasheets for GNED FO

Datasheets found :: 1545
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |
No. Part Name Description Manufacturer
181 2N2322 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
182 2N2323 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
183 2N2324 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
184 2N2325 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
185 2N2326 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
186 2N2405 NPN silicon annular transistor designed for medium-power applications Motorola
187 2N2453 Dual NPN silicon transistor designed for differential amplifier applications Motorola
188 2N2453A Dual NPN silicon transistor designed for differential amplifier applications Motorola
189 2N2639 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
190 2N2640 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
191 2N2641 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
192 2N2642 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
193 2N2643 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
194 2N2644 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
195 2N2646 Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits Motorola
196 2N2647 Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits Motorola
197 2N2728 PNP germanium high-current power transistor especially designed for solar cells, thermo-electric generators, sea cells, fuel cells, and 1.5-volt batteries Motorola
198 2N2802 Dual PNP silicon annular transistors designed for differential applications Motorola
199 2N2803 Dual PNP silicon annular transistors designed for differential applications Motorola
200 2N2804 Dual PNP silicon annular transistors designed for differential applications Motorola
201 2N2805 Dual PNP silicon annular transistors designed for differential applications Motorola
202 2N2806 Dual PNP silicon annular transistors designed for differential applications Motorola
203 2N2807 Dual PNP silicon annular transistors designed for differential applications Motorola
204 2N2845 NPN silicon annular transistor designed for switching applications Motorola
205 2N2846 NPN silicon annular transistor designed for switching applications Motorola
206 2N2847 NPN silicon annular transistor designed for switching applications Motorola
207 2N2848 NPN silicon annular transistor designed for switching applications Motorola
208 2N2857 NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers Motorola
209 2N2894 PNP silicon annular transistor designed for switching applications Motorola
210 2N2903 Dual NPN silicon transistors designed for differential amplifier applications Motorola


Datasheets found :: 1545
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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