| No. |
Part Name |
Description |
Manufacturer |
| 271 |
2N3823 |
Silicon N-channel junction field-effect transistor designed for VHF amplifier and mixer applications |
Motorola |
| 272 |
2N3824 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 273 |
2N3839 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
| 274 |
2N3866 |
NPN silicon transistor, designed for amplifier, frequency-multiplier, or oscillator applications in military and industrial equipment |
Motorola |
| 275 |
2N3866 |
Epitaxial planar NPN transistor designed for VHF-UHF class A, B or C amplifier circuits and oscillator applications |
SGS-ATES |
| 276 |
2N3950 |
NPN silicon RF power transistor designed for high-power RF amplifier applications |
Motorola |
| 277 |
2N3980 |
Silicon annular PN unijunction transistor designed for military and industrial use in pulse, timing, sensing, and oscillator circuits |
Motorola |
| 278 |
2N4012 |
NPN silicon transistor designed for frequency-multiplication applications |
Motorola |
| 279 |
2N4048 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 280 |
2N4049 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 281 |
2N4050 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 282 |
2N4051 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 283 |
2N4052 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 284 |
2N4053 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 285 |
2N4199 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 286 |
2N4200 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 287 |
2N4201 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 288 |
2N4202 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 289 |
2N4203 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 290 |
2N4204 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 291 |
2N4212 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 292 |
2N4213 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 293 |
2N4214 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 294 |
2N4215 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 295 |
2N4216 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 296 |
2N4223 |
Silicon N-channel junction field-effect transistor, designed for VHF amplifier and mixer applications |
Motorola |
| 297 |
2N4224 |
Silicon N-channel junction field-effect transistor, designed for VHF amplifier and mixer applications |
Motorola |
| 298 |
2N4248 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
| 299 |
2N4249 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
| 300 |
2N4250 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
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