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Datasheets for GNED FO

Datasheets found :: 1536
Page: | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |
No. Part Name Description Manufacturer
301 2N4250A Silicon PNP Transistors designed for low level - low nosie amplifier applications Central Semiconductor
302 2N4264 NPN silicon transistor designed for low-level, saturated logic applications Motorola
303 2N4265 NPN silicon transistor designed for low-level, saturated logic applications Motorola
304 2N4409 NPN silicon epitaxial transistor, designed for driving neon display tubes Motorola
305 2N4410 NPN silicon epitaxial transistor, designed for driving neon display tubes Motorola
306 2N4416 Silicon N-channel junction field-effect transistor designed for VHF/UHF amplifier applications Motorola
307 2N4427 Epitaxial planar NPN transistor designed for VHF class A, B or C amplifier and oscillator applications SGS-ATES
308 2N4428 Epitaxial planar NPN transistor designed for VHF-UHF class C amplifier output stages in military an industrial communications applications SGS-ATES
309 2N4441 Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications Motorola
310 2N4442 Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications Motorola
311 2N4443 Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications Motorola
312 2N4444 Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications Motorola
313 2N4924 NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications Motorola
314 2N4925 NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications Motorola
315 2N4926 NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications Motorola
316 2N4927 NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications Motorola
317 2N4948 Silicon annular unijunction transistor designed for military and industrial use Motorola
318 2N4949 Silicon annular unijunction transistor designed for military and industrial use Motorola
319 2N499 Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators Motorola
320 2N499A Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators Motorola
321 2N502 Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators Motorola
322 2N502A Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators Motorola
323 2N502B Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators Motorola
324 2N5086 PNP silicon annular transistor designed for low-level, low-noise amplifier applications Motorola
325 2N5087 PNP silicon annular transistor designed for low-level, low-noise amplifier applications Motorola
326 2N5088 NPN silicon annular transistor designed for low-level, low-noise amplifier applications Motorola
327 2N5089 NPN silicon annular transistor designed for low-level, low-noise amplifier applications Motorola
328 2N508A PNP Germanium Milliwatt transistor designed for low noise audio and switching applications Motorola
329 2N5109 Epitaxial planar NPN transistor, designed for CATV-MATV amplifier applications over a wide frequency range (40 to 860MHz) SGS-ATES
330 2N5208 PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz Motorola


Datasheets found :: 1536
Page: | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |



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