| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N2919 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 212 |
2N2920 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 213 |
2N2944 |
PNP silicon annular transistor designed for low-level, high-speed chopper applications |
Motorola |
| 214 |
2N2945 |
PNP silicon annular transistor designed for low-level, high-speed chopper applications |
Motorola |
| 215 |
2N2946 |
PNP silicon annular transistor designed for low-level, high-speed chopper applications |
Motorola |
| 216 |
2N2972 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 217 |
2N2973 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 218 |
2N2974 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 219 |
2N2975 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 220 |
2N2976 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 221 |
2N2977 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 222 |
2N2978 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 223 |
2N2979 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 224 |
2N3011 |
NPN silicon low-power transistor designed for switching applications |
Motorola |
| 225 |
2N3043 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 226 |
2N3044 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 227 |
2N3045 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 228 |
2N3046 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 229 |
2N3047 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 230 |
2N3048 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 231 |
2N3049 |
Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 232 |
2N3050 |
Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 233 |
2N3053 |
NPN silicon annular transistor designed for medium-current applications |
Motorola |
| 234 |
2N3055H |
NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. |
USHA India LTD |
| 235 |
2N3114 |
NPN silicon transistor designed for high-voltage, low power video amplifier applications |
Motorola |
| 236 |
2N3137 |
Epitaxial planar NPN transistor, designed for application as a Class-C, RF power amplifier |
SGS-ATES |
| 237 |
2N3423 |
Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers |
Motorola |
| 238 |
2N3424 |
Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers |
Motorola |
| 239 |
2N3425 |
Dual NPN silicon transistor designed for use as a high-frequency sense amplifier |
Motorola |
| 240 |
2N3722 |
NPN silicon transistor designed for medium-current, high-speed, high-voltage switching and driver applications |
Motorola |
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