| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N2957 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 182 |
2N297A |
PNP germanium power transistor for military and industrial power switching and amplifier applications |
Motorola |
| 183 |
2N3011 |
NPN silicon low-power transistor designed for switching applications |
Motorola |
| 184 |
2N3053 |
NPN Silicon Switching and amplifier Transistor |
ITT Semiconductors |
| 185 |
2N3054 |
NPN Silicon Power Transistor for audio amplifiers and switching applications |
Newmarket Transistors NKT |
| 186 |
2N3055 |
Silicon diffused mesa NPN power transistor for high power switching applications and AF amplifiers |
AEG-TELEFUNKEN |
| 187 |
2N3055 |
NPN Silicon Power Transistor for audio amplifiers and switching applications |
Newmarket Transistors NKT |
| 188 |
2N3055 |
High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. |
USHA India LTD |
| 189 |
2N3055H |
NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. |
USHA India LTD |
| 190 |
2N319 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 191 |
2N320 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 192 |
2N321 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 193 |
2N3227 |
NPN silicon annular transistor for low-current, high-speed switching applications |
Motorola |
| 194 |
2N3252 |
NPN silicon transistor for high-current saturated switching and core driver applications |
Motorola |
| 195 |
2N3253 |
NPN silicon transistor for high-current saturated switching and core driver applications |
Motorola |
| 196 |
2N3303 |
NPN silicon annular transistor designet for high-speed, high-current switching and driving applications |
Motorola |
| 197 |
2N3418 |
Planar transistor for switching applications |
SGS-ATES |
| 198 |
2N3419 |
Planar transistor for switching applications |
SGS-ATES |
| 199 |
2N3420 |
Planar transistor for switching applications |
SGS-ATES |
| 200 |
2N3421 |
Planar transistor for switching applications |
SGS-ATES |
| 201 |
2N3440S |
Planar transistor for switching applications |
SGS-ATES |
| 202 |
2N3444 |
NPN silicon transistor for high-current saturated switching and core driver applications |
Motorola |
| 203 |
2N3494 |
PNP silicon annular Star transistor for high voltage switching and DC to VHF amplifier applications |
Motorola |
| 204 |
2N3495 |
PNP silicon annular Star transistor for high voltage switching and DC to VHF amplifier applications |
Motorola |
| 205 |
2N3496 |
PNP silicon annular Star transistor for high voltage switching and DC to VHF amplifier applications |
Motorola |
| 206 |
2N3497 |
PNP silicon annular Star transistor for high voltage switching and DC to VHF amplifier applications |
Motorola |
| 207 |
2N350A |
PNP germanium power transistor for economical power switching applications |
Motorola |
| 208 |
2N3510 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 209 |
2N3511 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 210 |
2N351A |
PNP germanium power transistor for economical power switching applications |
Motorola |
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