No. |
Part Name |
Description |
Manufacturer |
241 |
2N3905 |
PNP silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
242 |
2N3905 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
243 |
2N3906 |
PNP Silicon Transistor (General small signal application Switching application) |
AUK Corp |
244 |
2N3906 |
PNP silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
245 |
2N3906 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
246 |
2N3959 |
NPN silicon transistor particularly well suited for high-speed current-mode logic switching applications |
Motorola |
247 |
2N3960 |
NPN silicon transistor particularly well suited for high-speed current-mode logic switching applications |
Motorola |
248 |
2N4123 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
249 |
2N4124 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
250 |
2N4125 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
251 |
2N4126 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
252 |
2N4233A |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
253 |
2N4391 |
High-speed switching and chopper N-Channel silicon junction Field-Effect Transistor |
NEC |
254 |
2N4392 |
High-speed switching and chopper N-Channel silicon junction Field-Effect Transistor |
NEC |
255 |
2N4393 |
High-speed switching and chopper N-Channel silicon junction Field-Effect Transistor |
NEC |
256 |
2N4400 |
General Purpose NPN Silicon Switching and amplifyng transistor |
ITT Semiconductors |
257 |
2N4401 |
General Purpose NPN Silicon Switching and amplifyng transistor |
ITT Semiconductors |
258 |
2N4402 |
General Purpose PNP Silicon Switching and amplifyng transistor |
ITT Semiconductors |
259 |
2N4403 |
General Purpose PNP Silicon Switching and amplifyng transistor |
ITT Semiconductors |
260 |
2N4895 |
Planar transistor for switching applications |
SGS-ATES |
261 |
2N4896 |
Planar transistor for switching applications |
SGS-ATES |
262 |
2N4897 |
Planar transistor for switching applications |
SGS-ATES |
263 |
2N508A |
PNP Germanium Milliwatt transistor designed for low noise audio and switching applications |
Motorola |
264 |
2N5190 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
265 |
2N5191 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
266 |
2N5192 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
267 |
2N5193 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
268 |
2N5194 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
269 |
2N5195 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
270 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
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