No. |
Part Name |
Description |
Manufacturer |
271 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
272 |
2N5336 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
273 |
2N5336 |
Planar transistor for switching applications |
SGS-ATES |
274 |
2N5337 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
275 |
2N5338 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
276 |
2N5338 |
Planar transistor for switching applications |
SGS-ATES |
277 |
2N5339 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
278 |
2N5339 |
Planar transistor for switching applications |
SGS-ATES |
279 |
2N5875 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
280 |
2N5876 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
281 |
2N5877 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
282 |
2N5878 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
283 |
2N6034 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
284 |
2N6035 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
285 |
2N6036 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
286 |
2N6037 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
287 |
2N6038 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
288 |
2N6039 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
289 |
2N6050 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
290 |
2N6051 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
291 |
2N6052 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
292 |
2N6053 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
293 |
2N6054 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
294 |
2N6055 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
295 |
2N6056 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
296 |
2N6057 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
297 |
2N6058 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
298 |
2N6059 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
299 |
2N6098 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
300 |
2N6099 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
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