| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N3647 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 212 |
2N3648 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 213 |
2N3713 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 214 |
2N3713 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 215 |
2N3714 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 216 |
2N3714 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 217 |
2N3715 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 218 |
2N3715 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 219 |
2N3716 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 220 |
2N3716 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 221 |
2N3722 |
NPN silicon transistor designed for medium-current, high-speed, high-voltage switching and driver applications |
Motorola |
| 222 |
2N3723 |
NPN silicon transistor designed for medium-current, high-speed, high-voltage switching and driver applications |
Motorola |
| 223 |
2N376A |
PNP germanium power transistor for economical power switching applications |
Motorola |
| 224 |
2N3789 |
PNP power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 225 |
2N3789 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 226 |
2N3790 |
PNP power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 227 |
2N3790 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 228 |
2N3791 |
PNP power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 229 |
2N3791 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 230 |
2N3792 |
PNP power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 231 |
2N3792 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 232 |
2N3821 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 233 |
2N3822 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 234 |
2N3824 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 235 |
2N3867 |
Planar transistor for switching applications |
SGS-ATES |
| 236 |
2N3868 |
Planar transistor for switching applications |
SGS-ATES |
| 237 |
2N3903 |
NPN silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
| 238 |
2N3903 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 239 |
2N3904 |
NPN silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
| 240 |
2N3904 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
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