No. |
Part Name |
Description |
Manufacturer |
1831 |
2N5038 |
High-Current, High-Power, High-Speed Silicon NPN Power Transistor |
RCA Solid State |
1832 |
2N5038 |
HIGH CURRENT NPN SILICON TRANSISTOR |
SGS Thomson Microelectronics |
1833 |
2N5038 |
HIGH CURRENT NPN SILICON TRANSISTOR |
SGS Thomson Microelectronics |
1834 |
2N5038 |
HIGH CURRENT NPN SILICON TRANSISTOR |
ST Microelectronics |
1835 |
2N5039 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
1836 |
2N5039 |
High-Current, High-Power, High-Speed Silicon NPN Power Transistor |
RCA Solid State |
1837 |
2N5301 |
High current, high power, high speed N-P-N power transistor. 40V, 200W. |
General Electric Solid State |
1838 |
2N5302 |
High current, high power, high speed N-P-N power transistor. 60V, 200W. |
General Electric Solid State |
1839 |
2N5303 |
High current, high power, high speed N-P-N power transistor. 80V, 200W. |
General Electric Solid State |
1840 |
2N5575 |
High-Current, High-Power Hometaxial-Base Silicon NPN Transistor |
RCA Solid State |
1841 |
2N5578 |
High-Current, High-Power Hometaxial-Base Silicon NPN Transistor |
RCA Solid State |
1842 |
2N5671 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
1843 |
2N5672 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
1844 |
2N5683 |
50A complementary silicon high-current, power PNP transistor 300W |
Motorola |
1845 |
2N5684 |
50A complementary silicon high-current, power PNP transistor 300W |
Motorola |
1846 |
2N5684-D |
High-Current Complementary Silicon Power Transistors |
ON Semiconductor |
1847 |
2N5685 |
50A complementary silicon high-current, power NPN transistor 300W |
Motorola |
1848 |
2N5686 |
50A complementary silicon high-current, power NPN transistor 300W |
Motorola |
1849 |
2N5884 |
hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
1850 |
2N5884 |
hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
1851 |
2N5885 |
High-current, high-power, high-speed power transistor. 60V, 200W. |
General Electric Solid State |
1852 |
2N5886 |
High-current, high-power, high-speed power transistor. 80V, 200W. |
General Electric Solid State |
1853 |
2N5886 |
HIGH CURRENT SILICON NPN POWER TRANSISTOR |
SGS Thomson Microelectronics |
1854 |
2N6032 |
High-current, high-power, high-speed silicon N-P-N transistor. |
General Electric Solid State |
1855 |
2N6032 |
High-Current, High-Speed, High-Power NPN silicon Transistor |
RCA Solid State |
1856 |
2N6033 |
High-current, high-power, high-speed silicon N-P-N transistor. |
General Electric Solid State |
1857 |
2N6033 |
High-Current, High-Speed, High-Power NPN silicon Transistor |
RCA Solid State |
1858 |
2N6098 |
High-Current, Silicon NPN VERSAWATT Transistor |
RCA Solid State |
1859 |
2N6099 |
High-Current, Silicon NPN VERSAWATT Transistor |
RCA Solid State |
1860 |
2N6100 |
High-Current, Silicon NPN VERSAWATT Transistor |
RCA Solid State |
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