| No. |
Part Name |
Description |
Manufacturer |
| 1951 |
2SB1508 |
PNP Epitaxial Planar Silicon Transistors 50V/12A High-Current Switching Applications |
SANYO |
| 1952 |
2SB1509 |
PNP Epitaxial Planar Silicon Transistors High-Current Switching Applications |
SANYO |
| 1953 |
2SB1511 |
PNP Epitaxial Planar Silicon Transistors 30V/20A High-Current Switching Applications |
SANYO |
| 1954 |
2SB1639 |
High-current gain Power Transistor (-60V/ -3A) |
ROHM |
| 1955 |
2SB553 |
Silicon PNP triple diffused high current switching transistor |
TOSHIBA |
| 1956 |
2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A. |
USHA India LTD |
| 1957 |
2SB753 |
Silicon PNP triple diffused high current switching transistor |
TOSHIBA |
| 1958 |
2SB754 |
HIGH CURRENT SWITCHING/ POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1959 |
2SB808 |
Low-Voltage Large-Current Amp Applications |
SANYO |
| 1960 |
2SB833 |
Silicon PNP triple diffused darlington power, high current switching transistor |
TOSHIBA |
| 1961 |
2SB892 |
PNP Epitaxial Planar Silicon Darlington Transistors Large-Current Switching Applications |
SANYO |
| 1962 |
2SB893 |
PNP Epitaxial Planar Silicon Transistor Large-Current Driving Applications |
SANYO |
| 1963 |
2SB926 |
PNP Epitaxial Planar Silicon Transistors Large-Current Driving Applications |
SANYO |
| 1964 |
2SB927 |
PNP Epitaxial Planar Silicon Transistors Large-Current Driving Applications |
SANYO |
| 1965 |
2SB985 |
PNP Epitaxial Planar Silicon Transistors Large-Current Driving Applications |
SANYO |
| 1966 |
2SB992 |
Silicon PNP triple diffused high current switching power transistor, complementary to 2SD1362 |
TOSHIBA |
| 1967 |
2SB993 |
Silicon PNP triple diffused high current switching power transistor |
TOSHIBA |
| 1968 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 1969 |
2SC1009 |
High voltage amplifier. Collector-base voltage Vcbo = 160V. Collector-emitter voltage Vceo = 140V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 1970 |
2SC1674 |
TV PIF amplifier, FM tuner RF amplifier, mixer, occillator. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 20mA. |
USHA India LTD |
| 1971 |
2SC1675 |
FM/AM RF amplifier, mixer, converter, oscillator,IF. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 50mA. |
USHA India LTD |
| 1972 |
2SC1845 |
Audio frequency low noise amplifier. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 120V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 50mA. |
USHA India LTD |
| 1973 |
2SC2001 |
Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 7 |
USHA India LTD |
| 1974 |
2SC2233 |
NPN silicon plastic power transistor. Designed for use in B/W TV horizontal deflection output. Vcbo =200V, DC current gain: 20 @ Ic = 4A. Pd = 40W. |
USHA India LTD |
| 1975 |
2SC2562 |
Silicon NPN epitaxial high-current switching transistor |
TOSHIBA |
| 1976 |
2SC2750 |
High Speed High Current Switching Industrial Use |
Unknow |
| 1977 |
2SC3074 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Current Switching Applications |
TOSHIBA |
| 1978 |
2SC3239 |
Silicon NPN epitaxial high current switching transistor |
TOSHIBA |
| 1979 |
2SC3303 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Current Switching Applications DC-DC Converter Applications |
TOSHIBA |
| 1980 |
2SC3308 |
Silicon NPN epitaxial high current switching transistor |
TOSHIBA |
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