| No. |
Part Name |
Description |
Manufacturer |
| 1981 |
2SC3346 |
Silicon NPN Epitaxial Type / High Current Switching Applications |
TOSHIBA |
| 1982 |
2SC3381 |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE/ CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE/ MAIN AMPLIFIERS) |
TOSHIBA |
| 1983 |
2SC3440 |
HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1984 |
2SC3443 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1985 |
2SC3709 |
NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS) |
TOSHIBA |
| 1986 |
2SC3709A |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
| 1987 |
2SC3710 |
NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS) |
TOSHIBA |
| 1988 |
2SC3710A |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
| 1989 |
2SC3728 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1990 |
2SC4356 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1991 |
2SC4482 |
NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications |
SANYO |
| 1992 |
2SC4484 |
NPN Epitaxial Planar Silicon Transistors High-Current Driver Applications |
SANYO |
| 1993 |
2SC4486 |
NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications |
SANYO |
| 1994 |
2SC4487 |
NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications |
SANYO |
| 1995 |
2SC4853 |
NPN Epitaxial Planar Silicon Transistor Low-Voltage, Low-Current High-Frequency Amplifier Applications |
SANYO |
| 1996 |
2SC4854 |
NPN Epitaxial Planar Silicon Transistor Low-Voltage, Low-Current High-Frequency Amplifier Applications |
SANYO |
| 1997 |
2SC4855 |
NPN Epitaxial Planar Silicon Transistor Low-Voltage, Low-Current& High-Frequency Amplifier Applications |
SANYO |
| 1998 |
2SC4881 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE. HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
| 1999 |
2SC5076 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS). HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
| 2000 |
2SC5175 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE. HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
| 2001 |
2SC5176 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. |
TOSHIBA |
| 2002 |
2SC5212 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 2003 |
2SC5485 |
FOR HIGH CURRENT APPLICATION SILICON NPN EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
| 2004 |
2SC5507 |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 2005 |
2SC5507-T2 |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 2006 |
2SC5537 |
NPN Epitaxial Planar Silicon Transistor Low-Voltage, Low-Current High-frequency Amplifier Applications |
SANYO |
| 2007 |
2SC5706 |
NPN Epitaxial Planar Silicon Transistors High Current Switching Applications |
SANYO |
| 2008 |
2SC5707 |
High Current Switching Applications |
SANYO |
| 2009 |
2SC838 |
Transistor. FM radio RF amp, mix. conv, osc, IF amp . Collector-base voltage Vcbo = 35V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 30mA. |
USHA India LTD |
| 2010 |
2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = |
USHA India LTD |
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