| No. |
Part Name |
Description |
Manufacturer |
| 2011 |
2SC945 |
Transistor. Audio frequency amplifier high frequency osc. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 50V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 150mA. |
USHA India LTD |
| 2012 |
2SD1012 |
NPN Epitaxial Planar Silicon Transistors Low-Voltage Large-Current Amplifier Applications |
SANYO |
| 2013 |
2SD1049 |
TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT HIGH SPEED SWITCHING |
Fuji Electric |
| 2014 |
2SD1087 |
Silicon NPN triple diffused darlington power high current switching transistor |
TOSHIBA |
| 2015 |
2SD1145 |
NPN Epitaxial Planar Silicon Transistor High-Current Driver Applications |
SANYO |
| 2016 |
2SD1159 |
TV Horizontal Deflection Output, High-Current Switching Applications |
SANYO |
| 2017 |
2SD1162 |
NPN silicon triple diffused darlington transistor, high current, high current switching |
NEC |
| 2018 |
2SD1162 |
NPN silicon triple diffused darlington transistor, high current, high current switching |
NEC |
| 2019 |
2SD1207 |
NPN Epitaxial Planar Silicon Darlington Transistors Large-Current Switching Applications |
SANYO |
| 2020 |
2SD1246 |
High-current Switching |
ON Semiconductor |
| 2021 |
2SD1246 |
NPN Epitaxial Planar Silicon Transistors Large-Current Driving Applications |
SANYO |
| 2022 |
2SD1247 |
High Current Switching Transistor |
ON Semiconductor |
| 2023 |
2SD1247 |
NPN Epitaxial Planar Silicon Transistors Large-Current Driving Applications |
SANYO |
| 2024 |
2SD1347 |
NPN Epitaxial Planar Silicon Transistors Large-Current Driving Applications |
SANYO |
| 2025 |
2SD1348 |
High Current Switching Transistor |
ON Semiconductor |
| 2026 |
2SD1362 |
Silicon NPN triple diffused high current switching transistor |
TOSHIBA |
| 2027 |
2SD1363 |
Silicon NPN triple diffused high current power switching transistor |
TOSHIBA |
| 2028 |
2SD1411 |
Silicon NPN triple diffused high current switching power transistor |
TOSHIBA |
| 2029 |
2SD1411A |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2030 |
2SD1412 |
Silicon NPN triple diffused high current power switching transistor |
TOSHIBA |
| 2031 |
2SD1412A |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2032 |
2SD1435K |
SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER HIGH CURRENT SWITCHING |
Hitachi Semiconductor |
| 2033 |
2SD1460 |
Silicon NPN triple diffused darlington power high current switching transistor |
TOSHIBA |
| 2034 |
2SD1525 |
Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) High Current Switching Applications |
TOSHIBA |
| 2035 |
2SD1591 |
Audio Frequency Power Amplifier and Low Speed High Current Switching Industrial Use |
Unknow |
| 2036 |
2SD1616A |
Transistor. Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 1A. |
USHA India LTD |
| 2037 |
2SD1618 |
Low-Voltage High-Current Amplifier, Muting Applications |
SANYO |
| 2038 |
2SD1621 |
NPN Epitaxial Planar Silicon Transistors High-Current Driver Applications |
SANYO |
| 2039 |
2SD1623 |
NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications |
SANYO |
| 2040 |
2SD1624 |
NPN Epitaxial Planar Silicon Transistors High Current Switching Applications |
SANYO |
| | | |
