| No. |
Part Name |
Description |
Manufacturer |
| 2071 |
2SD2280 |
NPN Epitaxial Planar Silicon Transistors 50V/7A High-Current Switching Applications |
SANYO |
| 2072 |
2SD2281 |
NPN Epitaxial Planar Silicon Transistors 50V/12A High-Current Switching Applications |
SANYO |
| 2073 |
2SD2282 |
NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications |
SANYO |
| 2074 |
2SD2285 |
NPN Epitaxial Planar Silicon Transistors 30V/20A High-Current Switching Applications |
SANYO |
| 2075 |
2SD2414 |
NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING/ POWER AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 2076 |
2SD2414(SM) |
Transistor Silicon NPN Triple Diffused Type High Current Switching Applications Power Amplifier Applications |
TOSHIBA |
| 2077 |
2SD2414SM |
High Current Switching Applications Power Amplifier Applications |
TOSHIBA |
| 2078 |
2SD2486 |
Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) |
Panasonic |
| 2079 |
2SD2527 |
Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) |
Panasonic |
| 2080 |
2SD3067 |
N CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHIGN/ CHOPPER REGULATOR/ DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) |
TOSHIBA |
| 2081 |
2SD313 |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W. |
USHA India LTD |
| 2082 |
2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A. |
USHA India LTD |
| 2083 |
2SD553 |
Silicon NPN triple diffused high current transistor |
TOSHIBA |
| 2084 |
2SD553 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2085 |
2SD741 |
Low Speed High Current Switching |
Unknow |
| 2086 |
2SD842 |
HIGH CURRENT SWITCHING APPLICATIONS |
TOSHIBA |
| 2087 |
2SD843 |
HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
| 2088 |
2SD844 |
Silicon NPN triple diffused high current power switching transistor |
TOSHIBA |
| 2089 |
2SD851 |
Low Speed High Current Switching Industrial Use |
Unknow |
| 2090 |
2SD880Y |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W. |
USHA India LTD |
| 2091 |
2SJ103 |
Field Effect Transistor Silicon P Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications |
TOSHIBA |
| 2092 |
2SJ104 |
Field Effect Transistor Silicon P Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications |
TOSHIBA |
| 2093 |
2SJ105 |
Field Effect Transistor Silicon P Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications |
TOSHIBA |
| 2094 |
2SJ106 |
Field Effect Transistor Silicon P Channel Junction Type Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications |
TOSHIBA |
| 2095 |
2SJ107 |
Field Effect Transistor Silicon P Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications |
TOSHIBA |
| 2096 |
2SJ144 |
Field Effect Transistor Silicon P Channel Junction Type Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications |
TOSHIBA |
| 2097 |
2SK1118 |
N Channel MOS Type(for High Speed/ High Current DC-DC Converter/ Relay Drive and Motor Diver) |
TOSHIBA |
| 2098 |
2SK1358 |
FET/ Silicon N Channel MOS Type(for High Speed/ High Current DC-DC Converter/ Relay Drive and Motor Diver) |
TOSHIBA |
| 2099 |
2SK1363 |
Silicon N-Channel MOS Type / High Speed / High Current Switching Applications |
TOSHIBA |
| 2100 |
2SK2038 |
N CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING APPLICATIONS) |
TOSHIBA |
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