| No. |
Part Name |
Description |
Manufacturer |
| 1891 |
2N918 |
hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W |
SGS Thomson Microelectronics |
| 1892 |
2N918 |
hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W |
SGS Thomson Microelectronics |
| 1893 |
2SA1012 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
| 1894 |
2SA1020 |
One Watt High Current PNP Transistor |
ON Semiconductor |
| 1895 |
2SA1244 |
Transistor Silicon PNP Epitaxial Type (PCT process) High Current Switching Applications |
TOSHIBA |
| 1896 |
2SA1279 |
Silicon PNP epitaxial high current switching transistor |
TOSHIBA |
| 1897 |
2SA1293 |
TRANSISTOR SILICON PNP PITAXIAL TYPE (PCT PROCESS) High Current Switching Applications |
TOSHIBA |
| 1898 |
2SA1307 |
Silicon PNP epitaxial high current switching transistor |
TOSHIBA |
| 1899 |
2SA1308 |
Silicon PNP epitaxial high current switching transistor |
TOSHIBA |
| 1900 |
2SA1349 |
TRANSISTOR (LOW NOISE AUDIO AMPLIFIER APPLICATIONS. RECOMMENDED FOR CASCADE/ CURRENT MIRROR CIRCUIT APPLICATIONS OF THE FIRST STAGES OF PRE/ MAIN AMPL |
TOSHIBA |
| 1901 |
2SA1365 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1902 |
2SA1451 |
TRANSISTOR (HIGH SPEED/ HIGH CURRENT SWITCHING APPLICATIONS) |
TOSHIBA |
| 1903 |
2SA1451A |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH SPEED, High Current Switching Applications |
TOSHIBA |
| 1904 |
2SA1452 |
TRANSISTOR (HIGH SPEED/ HIGH CURRENT SWITCHING APPLICATIONS) |
TOSHIBA |
| 1905 |
2SA1452A |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH SPEED, High Current Switching Applications |
TOSHIBA |
| 1906 |
2SA1641 |
PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications |
SANYO |
| 1907 |
2SA1702 |
PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications |
SANYO |
| 1908 |
2SA1704 |
PNP Epitaxial Planar Silicon Transistors High-Current Driver Applications |
SANYO |
| 1909 |
2SA1706 |
PNP Epitaxial Planar Silicon Transistors High-Current Switching Applications |
SANYO |
| 1910 |
2SA1707 |
PNP Epitaxial Planar Silicon Transistors High-Current Switching Applications |
SANYO |
| 1911 |
2SA1734 |
High Current PNP Transistor |
ON Semiconductor |
| 1912 |
2SA1771 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE HIGH CURRENT SWITCHING APPLICATIONS |
TOSHIBA |
| 1913 |
2SA1855 |
High Current PNP Switching Transistor |
ON Semiconductor |
| 1914 |
2SA1887 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS |
TOSHIBA |
| 1915 |
2SA1905 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS |
TOSHIBA |
| 1916 |
2SA1933 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS |
TOSHIBA |
| 1917 |
2SA1934 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS |
TOSHIBA |
| 1918 |
2SA1945 |
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1919 |
2SA1945 |
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1920 |
2SA1969 |
PNP Epitaxial Planar Silicon Transistor High-Frequency Medium-Output Amplifier,Medium-Current Ultrahigh-Speed Switching Applications |
SANYO |
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