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Datasheets for CURRE

Datasheets found :: 51329
Page: | 59 | 60 | 61 | 62 | 63 | 64 | 65 | 66 | 67 |
No. Part Name Description Manufacturer
1861 2N6101 High-Current, Silicon NPN VERSAWATT Transistor RCA Solid State
1862 2N6102 High-Current, Silicon NPN VERSAWATT Transistor RCA Solid State
1863 2N6103 High-Current, Silicon NPN VERSAWATT Transistor RCA Solid State
1864 2N6257 Hometaxial II High-Power High-Current NPN Transistor RCA Solid State
1865 2N6258 Hometaxial II High-Power High-Current NPN Transistor RCA Solid State
1866 2N6259 Hometaxial II High-Current Silicon NPN Transistor RCA Solid State
1867 2N6496 High current, high power, high speed silicon N-P-N planar transistor. General Electric Solid State
1868 2N6496 High-Current, High-Power, High-Speed Silicon NPN Power Transistor RCA Solid State
1869 2N6510 High-Voltage, High-Current Silicon NPN Power-Switching Transistor RCA Solid State
1870 2N6511 High-Voltage, High-Current Silicon NPN Power-Switching Transistor RCA Solid State
1871 2N6512 High-Voltage, High-Current Silicon NPN Power-Switching Transistor RCA Solid State
1872 2N6513 High-Voltage, High-Current Silicon NPN Power-Switching Transistor RCA Solid State
1873 2N6514 High-Voltage, High-Current Silicon NPN Power-Switching Transistor RCA Solid State
1874 2N6702 High-current silicon N-P-N VERSAWATT transistor. General Electric Solid State
1875 2N6703 High-current silicon N-P-N VERSAWATT transistor. General Electric Solid State
1876 2N6704 High-current silicon N-P-N VERSAWATT transistor. General Electric Solid State
1877 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
1878 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
1879 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
1880 2N6758 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
1881 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
1882 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
1883 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
1884 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
1885 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
1886 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
1887 2N699 NPN silicon annular transistor designed for medium-current switching and amplifier applications Motorola
1888 2N706 Silicon low-current fast switching NPN transistor - metal case IPRS Baneasa
1889 2N708 Silicon low-current fast switching NPN transistor - metal case IPRS Baneasa
1890 2N718 NPN silicon annular Star transistor for medium current switching and amplifier applications Motorola


Datasheets found :: 51329
Page: | 59 | 60 | 61 | 62 | 63 | 64 | 65 | 66 | 67 |



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